Abstract:
A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole.
Abstract:
A wiring substrate includes: a substrate having a first surface and a second surface; a first insulating layer stacked on the first surface; a pad electrode stacked on the first insulating layer; a through electrode connected to the pad electrode; and a second insulating layer disposed between the substrate and the through electrode and between the first insulating layer and the through electrode, wherein a diameter of the through electrode in a connection section between the pad electrode and the through electrode is smaller than a diameter of the through electrode on the second surface side, the first insulating layer, the second insulating layer and the through electrode overlap with each other in a peripheral area of the connection section, when seen from a plan view, and the thickness of the first insulating layer in the area is thinner than the thickness of the first insulating layer in other areas.
Abstract:
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
Abstract:
A liquid droplet ejection head includes: a first substrate having a pressurizing chamber with a nozzle aperture that ejects liquid droplets, and a first surface on which is formed a first wiring electrically connected to the drive element; a second substrate disposed on the first surface of the first substrate and covering the driven element, the second substrate having a second surface and a side surface, the second surface facing in a same direction as the first surface of the first substrate and on which is formed a second wiring, the side surface on which is formed a third wiring that combines the first wiring and the second wiring; a semiconductor element disposed on the second surface of the second substrate, and which drives the driven element; and plating that electrically connects the first wiring, the second wiring, the third wiring, and a connection terminal of the semiconductor element.