Cu ALLOY TARGET
    1.
    发明申请

    公开(公告)号:US20210230718A1

    公开(公告)日:2021-07-29

    申请号:US16965185

    申请日:2020-02-06

    Applicant: ULVAC, INC.

    Inventor: Satoru TAKASAWA

    Abstract: There is provided a Cu alloy target including a Cap film alloy. In a case where the number of atoms of the Cap film alloy is 100 at %, when the Cap film alloy contains Cu of more than 50 at % and Al of 0.5 at % or more, the Cap film alloy contains an additive metal containing at least one metal material selected from the group consisting of Mg of 0.5 at % or more, Si of 0.5 at % or more, and Ni of 3 at % or more, or contains Ca of 0.5 at % or more as the additive metal. Adhesion between a Cap film and a Si oxide thin film formed on the Cap film by a CVD method is strong, and removal does not occur.

    CU ALLOY TARGET, WIRING FILM, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE

    公开(公告)号:US20210215986A1

    公开(公告)日:2021-07-15

    申请号:US16965163

    申请日:2020-01-29

    Applicant: ULVAC, INC.

    Abstract: There is provided a Cu alloy target on a surface of a substrate made at least one of glass and resin produced by an adhering film alloy containing Cu and additive metals, the adhering film formed by sputtering. The additive metals include two or more of metals selected from the group consisting of Mg of 0.5 at % or more and 6 at % or less, Al of 1 at % or more and 15 at % or less, and Si of 0.5 at % or more and 10 at % or less. The adhering film has strong adhesive force that resists removal.

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