公开(公告)号：US20210140032A1

公开(公告)日：2021-05-13

申请号：US17052056

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Ryouta NAKAMURA ,  Tomohiro NAGATA ,  Yasuhiko AKAMATSU ,  Motoshi KOBAYASHI ,  Yuusuke UJIHARA ,  Yasuo NAKADAI ,  Junichi NITTA

IPC: C23C14/34 ,  C22C21/08

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy target capable of forming an aluminum alloy film having excellent bending resistance and heat resistance, and a method of producing the aluminum alloy target.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy target according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. The aluminum alloy film formed using such an aluminum alloy target has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

公开(公告)号：US20150230343A1

公开(公告)日：2015-08-13

申请号：US14693159

申请日：2015-04-22

Applicant: ULVAC, Inc.

Inventor： Satoru TAKASAWA ,  Shuhei ICHIKAWA ,  Isao SUGIURA ,  Satoru ISHIBASHI ,  Junichi NITTA

IPC: H05K3/16 ,  H05K1/11 ,  H05K3/18 ,  H05K1/03 ,  C23F1/02 ,  H05K3/06

CPC classification number: H05K3/16 ,  C22C9/01 ,  C22C9/06 ,  C23C14/205 ,  C23C14/3414 ,  C23F1/02 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/15311 ,  H05K1/0366 ,  H05K1/115 ,  H05K3/06 ,  H05K3/108 ,  H05K3/188 ,  H05K3/388 ,  H05K3/4644 ,  H05K2201/0209 ,  H05K2201/0317 ,  H05K2201/09509 ,  H05K2201/09563 ,  H01L2224/0401

Abstract: A mounting device in which a conductive film that is not separated is formed on a resin substrate. Alloy thin films, which contain more than 50% by atom of Cu, 5% by atom or more and 30% by atom or less of Ni, and 3% by atom or more and 10% by atom or less of Al, are formed on a base consisting of a resin so as to be brought into contact with a surface of the base by sputtering. Conductive films consisting of copper are formed on surfaces of the alloy thin films so as to obtain a wiring film having a two-layer structure and a metal plug filled in a connection hole. The alloy thin films have high adhesion to a resin; and hence, the wiring film and the metal plug are not separated.

Abstract translation: 在树脂基板上形成没有分离的导电膜的安装装置。 含有超过50原子％的Cu，5原子％以上，30原子％以下的Ni，3原子％以上10原子以下的Al的合金薄膜形成为 在由树脂构成的基底上，通过溅射与基底的表面接触。 在合金薄膜的表面上形成由铜组成的导电膜，以获得具有两层结构的布线膜和填充在连接孔中的金属塞。 合金薄膜对树脂的粘附性高; 因此，布线膜和金属插塞不分离。

公开(公告)号：US20210226028A1

公开(公告)日：2021-07-22

申请号：US17055852

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Yuusuke UJIHARA ,  Motoshi KOBAYASHI ,  Yasuhiko AKAMATSU ,  Tomohiro NAGATA ,  Ryouta NAKAMURA ,  Junichi NITTA ,  Yasuo NAKADAI

IPC: H01L29/49 ,  H01L21/285 ,  C22C21/00 ,  C23C14/14 ,  C22F1/04

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

公开(公告)号：US20210172056A1

公开(公告)日：2021-06-10

申请号：US16759149

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Xiaoli LU ,  Junichi NITTA ,  Akira NAKAMURA ,  Miho SATOU

IPC: C23C14/34 ,  C22F1/10 ,  C22C19/07 ,  H01F41/18

Abstract: [Object] To provide a sputtering target with further improved sputtering efficiency, and a method of producing the sputtering target.
[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention is a cobalt target having a sputtering surface and a purity of 99.95 wt % or more. An intensity ratio (I(002)+I(004))/(I(100)+I(002)+I(101)+I(102)+I(110)+I(103)+I(112)+I(004)) of X-ray diffraction peaks corresponding to a (100) plane, a (002) plane, a (101) plane, a (102) plane, a (110) plane, a (103) plane, a (112) plane, and a (004) plane of a hexagonal close-packed lattice structure along the sputtering surface is 0.85 or more.

公开(公告)号：US20200058683A1

公开(公告)日：2020-02-20

申请号：US16587636

申请日：2019-09-30

Applicant: ULVAC, INC.

Inventor： Satoru TAKASAWA ,  Yasuo NAKADAI ,  Junichi NITTA ,  Satoru ISHIBASHI

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L27/32 ,  H01L23/498 ,  H01L29/49 ,  H01L29/66 ,  C23C14/34 ,  H01J37/34

Abstract: A wiring film capable of being patterned by a single etching process and has strong adhesion force to a resin substrate, and a semiconductor element and a display device that uses the wiring film, are disclosed. Since a base film that is in contact with a resin substrate is a copper thin film containing, at a predetermined ratio, aluminum as a main additive metal and silicon, titanium or nickel as a secondary additive metal, and has strong adhesion force to resins, wiring films (a gate electrode layer) do not separate from the resin substrate. Also, since the base film and a low resistance film contain a large amount of copper, the base film and the low resistance film may be etched together by means of an etchant or an etching gas by which copper is etched, therefore, the wiring films are able to be patterned by a single etching process.