公开(公告)号：US09230871B1

公开(公告)日：2016-01-05

申请号：US14489460

申请日：2014-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Kuo Wang ,  Chun-Liang Hou ,  Wen-Jung Liao

IPC: H01L23/58 ,  H01L21/66 ,  H01L27/088

CPC classification number: H01L22/34 ,  H01L27/088

Abstract: A test key structure includes a plurality of transistors formed on a scribe line of a wafer and arranged in a 2*N array having 2 columns and N rows. The transistors arranged in the 2*N array respectively includes a gate, a source, a drain, and a body. All of the sources of the transistors arranged in the 2*N array are electrically connected to each other.

Abstract translation: 测试键结构包括形成在晶片的划线上的多个晶体管，并且以具有2列N行的2×N阵列排列。 配置在2×N阵列中的晶体管分别包括栅极，源极，漏极和主体。 布置在2 * N阵列中的晶体管的所有源极彼此电连接。

公开(公告)号：US09964587B2

公开(公告)日：2018-05-08

申请号：US15151748

申请日：2016-05-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Kuo Wang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: G01R31/02 ,  G01R31/28 ,  H01L23/522 ,  H01L23/528 ,  H01L21/66

CPC classification number: G01R31/2884 ,  H01L22/14 ,  H01L22/30 ,  H01L22/34 ,  H01L23/5226 ,  H01L23/528

Abstract: A semiconductor structure includes at least two via chains. Each via chain includes at least one first conductive component, at least one second conductive component and at least one via. The first conductive component has an axis along an extending direction of the first conductive component. The via connects the first conductive component to the second conductive component. The via has a center defining a shift distance from the axis of the first conductive component. The shift distances of the via chains are different. A testing method using such a semiconductor structure includes drawing a resistance-shift distance diagram illustrating a relationship between the resistances of the via chains and the shift distances of the via chains. At least one dimensional feature is obtained from the resistance-shift distance diagram.

公开(公告)号：US20150112623A1

公开(公告)日：2015-04-23

申请号：US14059450

申请日：2013-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Kuo Wang ,  Chun-Liang Hou ,  Wen-Jung Liao

IPC: H01L21/66

CPC classification number: H01L22/34 ,  H01L22/14

Abstract: A method of the measuring a critical dimension of a spacer is provided. The measurement is performed by using several test structures of measuring doping region resistance. Each of the test structure has different space disposed between a first gate line and a second gate line. By measuring a doping region resistance of each test structure, a plot of reciprocal of resistance versus space can be accomplished. Then, making regression of the plot, a correlation can be formed. Finally, a critical dimension of a spacer can be get by extrapolating the correlation back to 0 unit of reciprocal of resistance.

Abstract translation: 提供了一种测量间隔物临界尺寸的方法。 通过使用测量掺杂区域电阻的几个测试结构来进行测量。 每个测试结构具有设置在第一栅极线和第二栅极线之间的不同空间。 通过测量每个测试结构的掺杂区域电阻，可以实现电阻与空间的倒数的曲线。 然后，使情节回归，可以形成一个相关性。 最后，可以通过将相关性推回到0单位的电阻倒数来获得间隔物的临界尺寸。

公开(公告)号：US20170328949A1

公开(公告)日：2017-11-16

申请号：US15151748

申请日：2016-05-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Kuo Wang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: G01R31/28 ,  H01L23/522 ,  H01L21/66 ,  H01L23/528

CPC classification number: G01R31/2884 ,  H01L22/14 ,  H01L22/30 ,  H01L22/34 ,  H01L23/5226 ,  H01L23/528

Abstract: A semiconductor structure includes at least two via chains. Each via chain includes at least one first conductive component, at least one second conductive component and at least one via. The first conductive component has an axis along an extending direction of the first conductive component. The via connects the first conductive component to the second conductive component. The via has a center defining a shift distance from the axis of the first conductive component. The shift distances of the via chains are different. A testing method using such a semiconductor structure includes drawing a resistance-shift distance diagram illustrating a relationship between the resistances of the via chains and the shift distances of the via chains. At least one dimensional feature is obtained from the resistance-shift distance diagram.