公开(公告)号：US20230270017A1

公开(公告)日：2023-08-24

申请号：US17703967

申请日：2022-03-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Yi Wu ,  Jia-Rong Wu ,  Yu-Hsiang Lin ,  Yi-Wen Chen ,  Kun-Sheng Yang

IPC: H01L43/12 ,  H01L21/308

CPC classification number: H01L43/12 ,  H01L21/308

Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a substrate, forming a spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the MTJ and the SOT layer, forming a first hard mask on the IMD layer, forming a semiconductor layer on the first hard mask, and then patterning the first hard mask.

公开(公告)号：US20240347583A1

公开(公告)日：2024-10-17

申请号：US18195905

申请日：2023-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Sheng Yang ,  Yi-Wen Chen ,  Hung-Yi Wu ,  YI CHUEN ENG ,  Yu-Hsiang Lin

IPC: H01L29/06 ,  H01L27/088

CPC classification number: H01L29/0603 ,  H01L27/0886

Abstract: A semiconductor device includes a substrate having a medium-voltage (MV) region and a logic region, a gate structure on the MV region, a first single diffusion break (SDB) structure and a second SDB structure in the substrate directly under the gate structure, and a source/drain region adjacent to two sides of the gate structure. Preferably, top surfaces of the first SDB structure and the second SDB structure are coplanar, bottom surfaces of the first SDB structure and the second SDB structure are coplanar, and the first SDB structure and the second SDB structure are made of same material.