公开(公告)号：US20250072080A1

公开(公告)日：2025-02-27

申请号：US18372684

申请日：2023-09-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Yih Chen ,  Yi-Wen Chen ,  Chia-Chen Sun ,  Wei-Chung Sun ,  Wan-Ching Lee

IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer on the gate structure, forming a patterned mask on the gate structure and one side of the gate structure, removing the first spacer on another side of the gate structure, and then forming a source/drain region adjacent to two sides of the gate structure.