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公开(公告)号：US20240363430A1
公开(公告)日：2024-10-31
申请号：US18203654
申请日：2023-05-31
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Yi Wang , Wei-Che Chen , Hung-Chun Lee , Yun-Yang He , Wei-Hao Chang , Chang-Yih Chen , Kun-Szu Tseng , Yao-Jhan Wang , Ying-Hsien Chen
IPC: H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/66 , H01L29/78
CPC classification number: H01L21/823481 , H01L21/823431 , H01L27/0886 , H01L29/0607 , H01L29/66795 , H01L29/7851 , H01L29/66545
Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an active region as the substrate includes a medium-voltage (MV) region and a low-voltage (LV) region, forming a first divot adjacent to one side of the active region, forming a second divot adjacent to another side of the active region, forming a first liner in the first divot and the second divot and on the substrate of the MV region and LV region, forming a second liner on the first liner, and then removing the second liner, the first liner, and the substrate on the LV region for forming a fin-shaped structure.
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公开(公告)号：US20240313046A1
公开(公告)日：2024-09-19
申请号：US18134555
申请日：2023-04-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Guang-Yu Lo , Chun-Tsen Lu , Chung-Fu Chang , Chih-Shan Wu , Yu-Hsiang Lin , Wei-Hao Chang
CPC classification number: H01L29/0649 , H01L29/66795 , H01L29/7851
Abstract: A method for fabricating a semiconductor device includes the steps of forming a fin-shaped structure on a substrate, forming a first trench and a second trench in the fin-shaped structure, forming a first dielectric layer in the first trench and the second trench, removing part of the first dielectric layer, forming a second dielectric layer in the first trench and the second trench to form a first single diffusion break (SDB) structure and a second SDB structure, and then forming a gate structure on the fin-shaped structure, the first SDB structure, and the second SDB structure.
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