公开(公告)号：US08779484B2

公开(公告)日：2014-07-15

申请号：US13688216

申请日：2012-11-29

Applicant: United Microelectronics Corp.

Inventor： Xu Yang Shen ,  Seng Wah Liau ,  Yuheng Liu ,  Qin Li ,  Kiet Houng Chow

IPC: H01L31/062

CPC classification number: H01L27/14621 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/18

Abstract: An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.

Abstract translation: 图像传感器包括多个滤色器和抗反射层。 滤色器位于基板上。 抗反射层位于基板和滤色片之间，对应于至少两个滤色器的抗反射层的部分具有不同的厚度。 此外，还提供了包括以下步骤的图像感测处理。 在基板上形成抗反射层。 在抗反射层上形成多个滤色器，其中至少两个滤色器正下方的抗反射层的部分具有不同的厚度。

公开(公告)号：US20140145282A1

公开(公告)日：2014-05-29

申请号：US13688216

申请日：2012-11-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xu Yang Shen ,  Seng Wah Liau ,  Yuheng Liu ,  Qin Li ,  Kiet Houng Chow

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14621 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/18

Abstract: An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.

Abstract translation: 图像传感器包括多个滤色器和抗反射层。 滤色器位于基板上。 抗反射层位于基板和滤色片之间，对应于至少两个滤色器的抗反射层的部分具有不同的厚度。 此外，还提供了包括以下步骤的图像感测处理。 在基板上形成抗反射层。 在抗反射层上形成多个滤色器，其中至少两个滤色器正下方的抗反射层的部分具有不同的厚度。

公开(公告)号：US09608126B1

公开(公告)日：2017-03-28

申请号：US14953036

申请日：2015-11-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Fu Hsu ,  Chun-Yuan Wu ,  Xu Yang Shen ,  Zhibiao Zhou ,  Qinggang Xing

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an interconnect structure, and an oxide semiconductor structure. The substrate has a first region and a second region. The interconnect structure is disposed on the substrate, in the first region. The oxide semiconductor structure is disposed over a hydrogen blocking layer, in the second region of the substrate.

公开(公告)号：US09966425B1

公开(公告)日：2018-05-08

申请号：US15445953

申请日：2017-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jen-Po Huang ,  Chin-Fu Lin ,  Bin-Siang Tsai ,  Xu Yang Shen ,  Seng Wah Liau ,  Yen-Chen Chen ,  Ko-Wei Lin ,  Chun-Ling Lin ,  Kuo-Chih Lai ,  Ai-Sen Liu ,  Chun-Yuan Wu ,  Yang-Ju Lu

IPC: H01L21/8242 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/60

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.

公开(公告)号：US09691733B1

公开(公告)日：2017-06-27

申请号：US15221609

申请日：2016-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xu Yang Shen ,  Sin-Shien Lin

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/83 ,  H01L21/187 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83948 ,  H01L2924/0504

Abstract: A bonded semiconductor structure includes a first substrate and a second substrate. The first substrate includes a first interconnection structure, a first dielectric layer, and a first silicon carbon nitride (SiCN) layer sequentially stacked thereon. And at least a first conductive pad is formed in the first dielectric layer and the first SiCN layer. The second substrate includes a second interconnection structure, a second dielectric layer, and a second SiCN layer sequentially stacked thereon. And at least a second conductive pad is formed in the second dielectric layer and the second SiCN layer. The first conductive pad physically contacts the second conductive pad, and the first SiCN layer physically contacts the second SiCN layer.

公开(公告)号：US20170092771A1

公开(公告)日：2017-03-30

申请号：US14953036

申请日：2015-11-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Fu Hsu ,  Chun-Yuan Wu ,  Xu Yang Shen ,  ZHIBIAO ZHOU ,  Qinggang Xing

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an interconnect structure, and an oxide semiconductor structure. The substrate has a first region and a second region. The interconnect structure is disposed on the substrate, in the first region. The oxide semiconductor structure is disposed over a hydrogen blocking layer, in the second region of the substrate.