公开(公告)号：US20140145282A1

公开(公告)日：2014-05-29

申请号：US13688216

申请日：2012-11-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xu Yang Shen ,  Seng Wah Liau ,  Yuheng Liu ,  Qin Li ,  Kiet Houng Chow

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14621 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/18

Abstract: An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.

Abstract translation: 图像传感器包括多个滤色器和抗反射层。 滤色器位于基板上。 抗反射层位于基板和滤色片之间，对应于至少两个滤色器的抗反射层的部分具有不同的厚度。 此外，还提供了包括以下步骤的图像感测处理。 在基板上形成抗反射层。 在抗反射层上形成多个滤色器，其中至少两个滤色器正下方的抗反射层的部分具有不同的厚度。

公开(公告)号：US09966425B1

公开(公告)日：2018-05-08

申请号：US15445953

申请日：2017-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jen-Po Huang ,  Chin-Fu Lin ,  Bin-Siang Tsai ,  Xu Yang Shen ,  Seng Wah Liau ,  Yen-Chen Chen ,  Ko-Wei Lin ,  Chun-Ling Lin ,  Kuo-Chih Lai ,  Ai-Sen Liu ,  Chun-Yuan Wu ,  Yang-Ju Lu

IPC: H01L21/8242 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/60

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.

公开(公告)号：US10446689B1

公开(公告)日：2019-10-15

申请号：US16274190

申请日：2019-02-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jen-Po Huang ,  Chien-Ming Lai ,  Yen-Chen Chen ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Seng Wah Liau ,  Han Chuan Fang

IPC: H01L29/768 ,  H01L29/417 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/786

Abstract: An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.

公开(公告)号：US10446688B1

公开(公告)日：2019-10-15

申请号：US16190090

申请日：2018-11-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jen-Po Huang ,  Chien-Ming Lai ,  Yen-Chen Chen ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Seng Wah Liau ,  Han Chuan Fang

IPC: H01L29/786 ,  H01L29/417 ,  H01L21/4757 ,  H01L29/66

Abstract: An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.

公开(公告)号：US08779484B2

公开(公告)日：2014-07-15

申请号：US13688216

申请日：2012-11-29

Applicant: United Microelectronics Corp.

Inventor： Xu Yang Shen ,  Seng Wah Liau ,  Yuheng Liu ,  Qin Li ,  Kiet Houng Chow

IPC: H01L31/062

CPC classification number: H01L27/14621 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/18

Abstract: An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.

Abstract translation: 图像传感器包括多个滤色器和抗反射层。 滤色器位于基板上。 抗反射层位于基板和滤色片之间，对应于至少两个滤色器的抗反射层的部分具有不同的厚度。 此外，还提供了包括以下步骤的图像感测处理。 在基板上形成抗反射层。 在抗反射层上形成多个滤色器，其中至少两个滤色器正下方的抗反射层的部分具有不同的厚度。