公开(公告)号：US08755646B2

公开(公告)日：2014-06-17

申请号：US13947119

申请日：2013-07-22

Applicant: United Microelectronics Corp.

Inventor： Yi-Ching Wu ,  Shuenn-Jeng Chen

IPC: G02B6/12

CPC classification number: G02B6/13 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136

Abstract: A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material layer in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer. The present invention further provides a semiconductor structure.

Abstract translation: 提供一种制造光变换器的方法。 首先提供衬底，其中衬底包括第一区域和第二区域。 然后在基板上形成第一材料层，除去除了第一区域之外的第一材料层的部分。 然后在基板上形成第二材料层，并且去除第一区域和第二区域中的第二材料层的部分。 最后，在基板上形成第一导电层，除去除了第二区域以外的第一导电层的部分，使第一材料层，第二材料层和第一导电层具有相同的高度，使得 第一材料层成为光变换器的一部分。 本发明还提供一种半导体结构。

公开(公告)号：US09064814B2

公开(公告)日：2015-06-23

申请号：US13921221

申请日：2013-06-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ching Wu ,  Chih-Sen Huang ,  Ching-Wen Hung

IPC: H01L27/092 ,  H01L21/311 ,  H01L23/485 ,  H01L21/8238

CPC classification number: H01L21/311 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823842 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A manufacturing method for a semiconductor device first provides a substrate having at least a first transistor formed thereon. The first transistor includes a first conductivity type. The first transistor further includes a first metal gate and a protecting layer covering sidewalls of the first metal gate. A portion of the first metal gate is removed to form a first recess and followed by removing a portion of the protecting layer to form a second recess. Then, an etch stop layer is formed in the second recess.

Abstract translation: 半导体器件的制造方法首先提供至少形成有第一晶体管的衬底。 第一晶体管包括第一导电类型。 第一晶体管还包括第一金属栅极和覆盖第一金属栅极的侧壁的保护层。 去除第一金属栅极的一部分以形成第一凹槽，然后除去保护层的一部分以形成第二凹槽。 然后，在第二凹部中形成蚀刻停止层。

公开(公告)号：US08921947B1

公开(公告)日：2014-12-30

申请号：US13913617

申请日：2013-06-10

Applicant: United Microelectronics Corp.

Inventor： Ching-Wen Hung ,  Chih-Sen Huang ,  Yi-Ching Wu

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/792 ,  H01L27/10 ,  H01L29/739 ,  H01L21/768 ,  H01L29/45

CPC classification number: H01L29/458 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. A substrate with plural metal gates formed thereon is provided, wherein the adjacent metal gates are separated by insulation. A sacrificial layer is formed for capping the metal gates and the insulation, and the sacrificial layer and the insulation are patterned to form at least an opening for exposing the substrate. A silicide is formed corresponding to the opening at the substrate, and a conductive contact is formed in the opening. The conductive contact has a top area with a second diameter CD2 for opening the insulation. A patterned dielectric layer, further formed on the metal gates, the insulation and the conductive contact, at least has a first M0 opening with a third diameter CD3 for exposing the conductive contact, wherein CD2>CD3.

Abstract translation: 提供一种制造半导体器件的方法和使用其制造的器件。 提供了形成有多个金属栅的衬底，其中相邻的金属栅极被隔离隔开。 形成用于对金属栅极和绝缘体进行封盖的牺牲层，并且牺牲层和绝缘体被图案化以形成用于暴露衬底的至少一个开口。 对应于基板上的开口形成硅化物，并且在开口中形成导电接触。 导电触点具有顶部区域，具有用于打开绝缘体的第二直径CD2。 进一步形成在金属栅极上的绝缘层和导电接触件的图案化电介质层至少具有第三直径CD3的第一M0开口，用于暴露导电接触，其中CD2> CD3。

公开(公告)号：US20140361381A1

公开(公告)日：2014-12-11

申请号：US13913617

申请日：2013-06-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Chih-Sen Huang ,  Yi-Ching Wu

IPC: H01L21/768 ,  H01L29/45

CPC classification number: H01L29/458 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. A substrate with plural metal gates formed thereon is provided, wherein the adjacent metal gates are separated by insulation. A sacrificial layer is formed for capping the metal gates and the insulation, and the sacrificial layer and the insulation are patterned to form at least an opening for exposing the substrate. A silicide is formed corresponding to the opening at the substrate, and a conductive contact is formed in the opening. The conductive contact has a top area with a second diameter CD2 for opening the insulation. A patterned dielectric layer, further formed on the metal gates, the insulation and the conductive contact, at least has a first M0 opening with a third diameter CD3 for exposing the conductive contact, wherein CD2>CD3.

Abstract translation: 提供一种制造半导体器件的方法和使用其制造的器件。 提供了形成有多个金属栅的衬底，其中相邻的金属栅极被隔离隔开。 形成用于对金属栅极和绝缘体进行封盖的牺牲层，并且牺牲层和绝缘体被图案化以形成用于暴露衬底的至少一个开口。 对应于基板上的开口形成硅化物，并且在开口中形成导电接触。 导电触点具有顶部区域，具有用于打开绝缘体的第二直径CD2。 进一步形成在金属栅极上的绝缘层和导电接触件的图案化电介质层至少具有第三直径CD3的第一M0开口，用于暴露导电接触，其中CD2> CD3。

公开(公告)号：US20130308899A1

公开(公告)日：2013-11-21

申请号：US13947119

申请日：2013-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ching Wu ,  Shuenn-Jeng Chen

IPC: G02B6/13

CPC classification number: G02B6/13 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136

Abstract: A method of fabricating an optical transformer is provided. A substrate is provided first, wherein the substrate includes a first region and a second region. Then a first material layer is formed on the substrate, and the portion of the first material layer other than in the first region is removed. Then a second material layer is formed on the substrate, and the portion of the second material layer in the first region and the second region is removed. Lastly, a first conductive layer is formed on the substrate and the portion of the first conductive layer other than in the second region is removed to make the first material layer, the second material layer and the first conductive layer have the same height such that the first material layer becomes a part of the optical transformer. The present invention further provides a semiconductor structure.

Abstract translation: 提供一种制造光变换器的方法。 首先提供衬底，其中衬底包括第一区域和第二区域。 然后在基板上形成第一材料层，除去除了第一区域之外的第一材料层的部分。 然后在基板上形成第二材料层，并且去除第一区域和第二区域中的第二材料层的部分。 最后，在基板上形成第一导电层，除去除了第二区域以外的第一导电层的部分，使第一材料层，第二材料层和第一导电层具有相同的高度，使得 第一材料层成为光变换器的一部分。 本发明还提供一种半导体结构。

公开(公告)号：US20140374805A1

公开(公告)日：2014-12-25

申请号：US13921221

申请日：2013-06-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ching Wu ,  Chih-Sen Huang ,  Ching-Wen Hung

IPC: H01L21/311 ,  H01L23/00

CPC classification number: H01L21/311 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823842 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A manufacturing method for a semiconductor device first provides a substrate having at least a first transistor formed thereon. The first transistor includes a first conductivity type. The first transistor further includes a first metal gate and a protecting layer covering sidewalls of the first metal gate. A portion of the first metal gate is removed to form a first recess and followed by removing a portion of the protecting layer to form a second recess. Then, an etch stop layer is formed in the second recess.

Abstract translation: 半导体器件的制造方法首先提供至少形成有第一晶体管的衬底。 第一晶体管包括第一导电类型。 第一晶体管还包括第一金属栅极和覆盖第一金属栅极的侧壁的保护层。 去除第一金属栅极的一部分以形成第一凹槽，然后除去保护层的一部分以形成第二凹槽。 然后，在第二凹部中形成蚀刻停止层。