公开(公告)号：US12094899B2

公开(公告)日：2024-09-17

申请号：US17333847

申请日：2021-05-28

Applicant: UNIVERSITY OF SOUTHERN CALIFORNIA

Inventor： Wei Wu ,  Tse-Hsien Ou ,  Yunxiang Wang ,  Hao Yang

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14685

Abstract: A semiconductor-based sensor with enhanced light absorption, and in particular, enhanced infrared light absorption includes a semiconductor light sensor element and a patterned spatially inhomogeneous dielectric layer disposed over the semiconductor light sensor element. Characteristically, spatial inhomogeneity of the patterned spatially inhomogeneous dielectric layer is optimized to provide a maximized electric field in the semiconductor light sensor element such light absorption is enhanced.