公开(公告)号：US3585711A

公开(公告)日：1971-06-22

申请号：US3585711D

申请日：1968-09-06

Applicant: US NAVY

Inventor： HICKS ROBERT E

IPC: B23K35/00 ,  H01L21/60 ,  B23K31/02

CPC classification number: B23K35/001 ,  B23K2035/008 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  Y10T29/49144 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/3512

Abstract: A PROCESS IS DISCLOSED WHEREBY BONDING OF A SEMICONDUCTOR CHIP TO AN ALUMINUM-COATED SUBSTRATE IS EFFECTED IN THE PRESENCE OF CHROMIUM. THE PRESENT METHOD CONTEMPLATES USING ALUMINUM AND GOLD SILICON AS THE BONDING

AGENT WITH THE CHROMIUM ACTING AS A CATALYST IN THE PRSENCE OF HEAT AND PRESSURE FOR FACILITATING A GOOD BOND.

公开(公告)号：US3647533A

公开(公告)日：1972-03-07

申请号：US3647533D

申请日：1969-08-08

Applicant: US NAVY

Inventor： HICKS ROBERT E

IPC: H01L21/60 ,  H01L25/18 ,  H05K3/14 ,  H05K3/40 ,  B44D1/52

CPC classification number: H01L24/81 ,  H01L25/18 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/19043 ,  H05K3/143 ,  H05K3/4007 ,  H05K2201/0317 ,  H05K2201/0367 ,  Y10S428/901

Abstract: A method for producing reliable bonding bumps on large-scale array substrates and hybrid add-on components, the present invention is compatible with a wide variety of microcircuit components. Generally, the method envisions fabrication of bonding bumps by thin-film vacuum deposition through a mechanical mask. In particular, a first metal is deposited on a substrate to a desired thickness whereupon said first metal is then codeposited with a second metal. The bump is completed with the sole deposition of the second metal. A bump thus produced may be further processed to produce a ''''solder-dipped bump'''' or may be used in the thin-film state for component mounting.

Abstract translation: 一种用于在大规模阵列基板和混合附加部件上制造可靠的接合凸块的方法，本发明与各种微电路部件兼容。 通常，该方法设想通过机械掩模通过薄膜真空沉积制造接合凸块。 特别地，将第一金属沉积在基底上至所需厚度，然后所述第一金属然后用第二金属共沉积。 用第二金属的唯一沉积完成凸块。 可以进一步处理由此产生的凸块以产生“焊料浸渍凸起”，或者可以以薄膜状态用于部件安装。