公开(公告)号：US3607379A

公开(公告)日：1971-09-21

申请号：US3607379D

申请日：1968-01-22

Applicant: US NAVY

Inventor： LEINKRAM CHARLES Z ,  PROM RICHARD L

IPC: H01L21/60 ,  H01L23/498 ,  H01L25/16 ,  H05K3/24 ,  B44D1/18 ,  C23B5/56

CPC classification number: H01L24/85 ,  H01L23/49866 ,  H01L24/45 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85473 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19043 ,  H05K3/244 ,  Y10S428/935 ,  Y10T428/12396 ,  Y10T428/12535 ,  Y10T428/12569 ,  Y10T428/12778 ,  Y10T428/12986 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00015

Abstract: An interconnection substrate is disclosed for use in hybrid microelectronic systems interconnecting transistors, resistive elements, semiconductor-integrated circuits, and other microelectronic circuit elements. The substrate consists of an insulative base and three metal films, for example, a first chromium film, a second gold film metallurgically bonded to the chromium film, and a third nickel film bonded to the gold. The interconnection substrate is prepared by (sequential) deposition of chromium, gold, and nickel onto a ceramic wafer. Alternatively the nickel film may be plated by other conventional methods. The desired circuit is then etched photolithographically to produce nickel pads for tin-lead soldered or welded connections. A second etching is made to produce gold pads suitable for thermal compression bonding, ultrasonic wire bonding and gold-silicon eutectic bonding. Circuits elements in the form of chips are then connected to the connection substrate and the entire unit encapsulated in a suitable protective material.

公开(公告)号：US3660632A

公开(公告)日：1972-05-02

申请号：US3660632D

申请日：1970-06-17

Applicant: US NAVY

Inventor： LEINKRAM CHARLES Z

IPC: B23K1/19 ,  B23K35/30 ,  H01L21/00 ,  B23K1/02 ,  B23K1/04

CPC classification number: H01L21/67144 ,  B23K1/19 ,  B23K35/3013 ,  H01L24/83 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01322 ,  H01L2924/1306 ,  H01L2924/13091 ,  Y10T29/49144 ,  H01L2924/00

Abstract: A method for bonding silicon chips to a cold substrate including the steps of mounting the chip on a gold plated Kovar tab; placing a solder preform on a gold lane of the substrate, positioning the tab on the solder preform, and passing a welding pulse through the Kovar tab to melt and reflow the solder preform.

Abstract translation: 一种用于将硅芯片接合到冷衬底的方法，包括将芯片安装在镀金科瓦标签上的步骤; 将焊料预制件放置在衬底的金色通道上，将焊盘定位在焊料预成型件上，并将焊接脉冲通过科瓦标签以熔化和回流焊料预制件。

公开(公告)号：US3680196A

公开(公告)日：1972-08-01

申请号：US3680196D

申请日：1970-05-08

Applicant: US NAVY

Inventor： LEINKRAM CHARLES Z

IPC: H01L21/00 ,  H01L21/60 ,  B23K31/02

CPC classification number: H01L24/27 ,  H01L21/67144 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15724 ,  H01L2924/19043 ,  H01L2924/3025 ,  Y10T29/49144 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: A process for bonding chip devices to hybrid circuitry including the steps of: 1) prewetting the chips by scrubbing in a goldsilicon solder lake at 400* C, 2) heating the substrate to eutectic temperature of 377* C, 3) positioning the chips on the gold land of the substrate, 4) pushing the chips onto the substrate to overcome the surface tension and cause the solder to flow, completely wetting the chip and substrate.

Abstract translation: 一种用于将芯片器件接合到混合电路的方法，包括以下步骤：1）通过在400℃的金 - 硅焊料槽中洗涤来预浸渍芯片，2）将衬底加热至共晶温度377℃，3） 芯片在基板的金色地面上，4）将芯片推到基板上以克服表面张力并导致焊料流动，完全润湿芯片和基板。

公开(公告)号：US3538597A

公开(公告)日：1970-11-10

申请号：US3538597D

申请日：1967-07-13

Applicant: US NAVY

Inventor： LEINKRAM CHARLES Z ,  SHIMKUS MICHAEL A

IPC: H01L21/50 ,  H01L23/047 ,  H01L23/10 ,  B01J17/00 ,  H01J7/02

CPC classification number: H01L23/10 ,  H01L21/50 ,  H01L23/047 ,  H01L2924/0002 ,  H01L2924/00