公开(公告)号：US08735251B2

公开(公告)日：2014-05-27

申请号：US14046414

申请日：2013-10-04

Applicant: Ultratech, Inc.

Inventor： Paul Stephen Andry ,  Edmund Juris Sprogis ,  Cornelia Kang-I Tsang

IPC: H01L21/336 ,  H01L21/76 ,  H01L21/311

CPC classification number: H01L24/19 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer not filling the trench; (c) filling remaining space in the trench with polysilicon; after (c), (d) fabricating at least a portion of a CMOS device in the substrate; (e) removing the polysilicon from the trench, the dielectric layer remaining on the sidewalls of the trench; (f) re-filling the trench with an electrically conductive core; and after (f), (g) forming one or more wiring layers over the top surface of the substrate, a wire of a wiring level of the one or more wiring levels closest to the substrate contacting a top surface of the conductive core.

Abstract translation: 一种硅通孔结构和一种制造通硅通孔的方法。 该方法包括：（a）在硅衬底中形成沟槽，沟槽通向衬底的顶表面; （b）在所述沟槽的侧壁上形成二氧化硅层，所述二氧化硅层不填充所述沟槽; （c）用多晶硅填充沟槽中的剩余空间; （c）之后，（d）在衬底中制造至少一部分CMOS器件; （e）从所述沟槽去除所述多晶硅，所述电介质层残留在所述沟槽的侧壁上; （f）用导电芯重新填充沟槽; 在（f）之后，（g）在衬底的顶表面上形成一个或多个布线层，与接触导电芯的顶表面的最接近衬底的一个或多个布线层的布线层的布线。

公开(公告)号：US20140094007A1

公开(公告)日：2014-04-03

申请号：US14046414

申请日：2013-10-04

Applicant: Ultratech, Inc.

Inventor： Paul Stephen Andry ,  Edmund Juris Sprogis ,  Cornelia Kang-I Tsang

IPC: H01L23/00

CPC classification number: H01L24/19 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer not filling the trench; (c) filling remaining space in the trench with polysilicon; after (c), (d) fabricating at least a portion of a CMOS device in the substrate; (e) removing the polysilicon from the trench, the dielectric layer remaining on the sidewalls of the trench; (f) re-filling the trench with an electrically conductive core; and after (f), (g) forming one or more wiring layers over the top surface of the substrate, a wire of a wiring level of the one or more wiring levels closest to the substrate contacting a top surface of the conductive core.

Abstract translation: 一种硅通孔结构和一种制造通硅通孔的方法。 该方法包括：（a）在硅衬底中形成沟槽，沟槽通向衬底的顶表面; （b）在所述沟槽的侧壁上形成二氧化硅层，所述二氧化硅层不填充所述沟槽; （c）用多晶硅填充沟槽中的剩余空间; （c）之后，（d）在衬底中制造至少一部分CMOS器件; （e）从所述沟槽去除所述多晶硅，所述电介质层残留在所述沟槽的侧壁上; （f）用导电芯重新填充沟槽; 在（f）之后，（g）在衬底的顶表面上形成一个或多个布线层，与接触导电芯的顶表面的最接近衬底的一个或多个布线层的布线层的布线。