公开(公告)号：US20170260629A1

公开(公告)日：2017-09-14

申请号：US15435333

申请日：2017-02-17

Applicant: Ultratech, Inc.

Inventor： Laurent Lecordier ,  Michael Ruffo

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/52

Abstract: A quartz crystal microbalance assembly includes a lid of a reactor chamber of an ALD system. A QCM crystal is disposed in a bottom section of a central cavity formed in the lid. A central portion of a front surface of the QCM crystal is exposed to an interior of the reactor chamber. A retainer arranged within the central cavity and above the QCM crystal presses the QCM crystal against a ledge in the lid to form a seal between the front surface of the QCM crystal and the ledge while also establishing electrical contact with the QCM crystal. A flange resides immediately adjacent a top surface of the lid and seals the central cavity while supporting electrical contact with the QCM crystal through the retainer. A transducer external to the reactor chamber and in electrical contact with the QCM crystal through a connector in the flange drives the QCM crystal.

公开(公告)号：US20170114451A1

公开(公告)日：2017-04-27

申请号：US15295813

申请日：2016-10-17

Applicant: Ultratech, Inc.

Inventor： Laurent Lecordier

IPC: C23C16/02 ,  C22B15/00 ,  C23C16/455 ,  C22B5/12 ,  H01L21/02 ,  C23C16/56

CPC classification number: C23C16/0272 ,  C22B5/12 ,  C22B15/00 ,  C23C16/04 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/321 ,  H01L23/481

Abstract: Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQyOx atop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQyOx layer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.

公开(公告)号：US10316406B2

公开(公告)日：2019-06-11

申请号：US15295813

申请日：2016-10-17

Applicant: Ultratech, Inc.

Inventor： Laurent Lecordier

IPC: C23C16/02 ,  C22B5/12 ,  C22B15/00 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  C23C16/04

Abstract: Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQyOx atop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQyOx layer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.