METHOD FOR MANUFACTURING CIRCUIT BOARD AND STACKED STRUCTURE

    公开(公告)号:US20230371189A1

    公开(公告)日:2023-11-16

    申请号:US17810340

    申请日:2022-06-30

    Inventor: Chun-Hung KUO

    Abstract: A method for manufacturing a circuit board includes providing a composite material film including a metal film and a polymeric film, disposing a dielectric layer on the polymeric film to form a stacked structure, forming a circuit layer with a contact pad on a substrate, bonding the stacked structure onto the substrate and the circuit layer, and forming a first opening extending through the metal film to form a patterned metal film. The dielectric layer directly contacts the substrate and entirely covers the circuit layer. The method further includes plasma etching the dielectric layer with the patterned metal film as a mask to form a second opening in the dielectric layer and expose the contact pad in the second opening, removing the composite material film, and depositing a conductive material in the second opening to form a conductive blind hole electrically connected to the contact pad.

    CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230319990A1

    公开(公告)日:2023-10-05

    申请号:US17662224

    申请日:2022-05-05

    Inventor: Chun-Hung KUO

    CPC classification number: H05K1/111 H05K3/4644

    Abstract: The present disclosure provides a circuit board and its manufacturing method. The circuit board includes a first circuit layer, a first conductive post, and a second circuit layer. The first circuit layer includes a first pad and a first seed layer covering a sidewall of the first pad. The first conductive post is on the first pad and directly connected to the first pad. The second circuit layer includes a second pad and a second seed layer covering a sidewall of the second pad. The second pad is on a first connecting end of the first conductive post. The first connecting end is embedded in the second pad, and the second pad is connected to and directly contacts the first connecting end. The first seed layer and the second seed layer do not extend on a sidewall of the first conductive post.

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