公开(公告)号：US20190267492A1

公开(公告)日：2019-08-29

申请号：US16413425

申请日：2019-05-15

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/45

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

公开(公告)号：US10340391B2

公开(公告)日：2019-07-02

申请号：US15637773

申请日：2017-06-29

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/10 ,  H01L29/12 ,  H01L21/16 ,  H01L21/44 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

公开(公告)号：US11133418B2

公开(公告)日：2021-09-28

申请号：US16413425

申请日：2019-05-15

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

公开(公告)号：US20190198334A1

公开(公告)日：2019-06-27

申请号：US15853862

申请日：2017-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shouguo Zhang ,  Hai Tao Liu ,  Ming Hua Du ,  Yen-Chen Chen

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/31

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

公开(公告)号：US11476367B2

公开(公告)日：2022-10-18

申请号：US17409461

申请日：2021-08-23

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

公开(公告)号：US20210384359A1

公开(公告)日：2021-12-09

申请号：US17409461

申请日：2021-08-23

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

公开(公告)号：US10510549B2

公开(公告)日：2019-12-17

申请号：US15853862

申请日：2017-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shouguo Zhang ,  Hai Tao Liu ,  Ming Hua Du ,  Yen-Chen Chen

IPC: H01L21/3065 ,  H01L21/31 ,  H01L21/02 ,  H01L21/285

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

公开(公告)号：US20190006519A1

公开(公告)日：2019-01-03

申请号：US15637773

申请日：2017-06-29

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.