公开(公告)号：US20240097038A1

公开(公告)日：2024-03-21

申请号：US17964925

申请日：2022-10-13

Applicant: United Microelectronics Corp.

Inventor： Yi Chuen Eng ,  Tzu-Feng Chang ,  Teng-Chuan Hu ,  Yi-Wen Chen ,  Yu-Hsiang Lin

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66795

Abstract: A semiconductor device, including a substrate, a first source/drain region, a second source/drain region, and a gate structure, is provided. The substrate has an extra body portion and a fin protruding from a top surface of the substrate, wherein the fin spans the extra body portion. The first source/drain region and the second source/drain region are in the fin. The gate structure spans the fin, is located above the extra body portion, and is located between the first source/drain region and the second source/drain region.

公开(公告)号：US20250151320A1

公开(公告)日：2025-05-08

申请号：US18531668

申请日：2023-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Tzu-Feng Chang ,  Teng-Chuan Hu ,  Yi-Wen Chen ,  Yu-Hsiang Lin

IPC: H01L29/78

Abstract: A FinFET LDMOS device includes a semiconductor substrate; juxtaposed first well and second well in the semiconductor substrate; semiconductor fins extending on the semiconductor substrate along a first direction, the semiconductor fins including a first fin portion in the first well and a second fin portion in the second well; an extra semiconductor body adjoining the first fin portion and the second fin portion and extending along a second direction; a source region on the first fin portion; a drain region on the second fin portion; a gate covering the semiconductor fin and extending along the second direction, wherein the gate partially overlaps the first fin portion and partially overlaps the second fin portion, and the extra semiconductor body is covered by the gate; and a single-diffusion break structure embedded in the second fin portion and between the gate and drain region.

公开(公告)号：US10068979B2

公开(公告)日：2018-09-04

申请号：US15677035

申请日：2017-08-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

公开(公告)号：US09923071B2

公开(公告)日：2018-03-20

申请号：US15682525

申请日：2017-08-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42356 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

公开(公告)号：US09773880B2

公开(公告)日：2017-09-26

申请号：US14877926

申请日：2015-10-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng ,  Teng-Chuan Hu ,  I-Chang Wang ,  Wei-Chih Chen ,  Hsiu-Kuan Hsu

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/42356 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

公开(公告)号：US09343531B2

公开(公告)日：2016-05-17

申请号：US14455947

申请日：2014-08-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi Chuen Eng

IPC: H01L27/148 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1033 ,  H01L29/66477 ,  H01L29/78

Abstract: A field effect transistor includes a substrate, an isolation layer, a gate, a channel, drain and a source. The substrate has an active region having a rectangular area and at least one protrusion protruded from the rectangular area. The isolation layer is formed on the substrate and encircling the active region. The gate crosses the active region and is formed above a middle portion of the active region. The channel is formed in the active region directly under the gate, extends to the at least one protrusion, and divides the active region into a first section and a second section. The drain formed in the first section and the source formed in the second section.

Abstract translation: 场效应晶体管包括衬底，隔离层，栅极，沟道，漏极和源极。 基板具有矩形区域的有源区域和从矩形区域突出的至少一个突出部。 隔离层形成在衬底上并且环绕有源区。 栅极跨越有源区并形成在有源区的中间部分之上。 通道形成在栅极正下方的有源区域中，延伸到至少一个突出部分，并将有源区域分成第一部分和第二部分。 在第一部分中形成的漏极和形成在第二部分中的源极。