公开(公告)号：US09397241B2

公开(公告)日：2016-07-19

申请号：US14563780

申请日：2014-12-08

Applicant: University of Ottawa

Inventor： Pierre Simon Joseph Berini ,  Chengkun Chen

IPC: G02B6/34 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/0236 ,  G02B6/26 ,  G02F1/025 ,  G02F1/17 ,  G02B6/122 ,  G02B6/124 ,  G02F1/015

CPC classification number: H01L31/02327 ,  G02B6/1226 ,  G02B6/124 ,  G02B6/26 ,  G02B6/266 ,  G02B6/34 ,  G02F1/025 ,  G02F1/17 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2202/10 ,  G02F2203/10 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/18 ,  Y02E10/50

Abstract: Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal grating is disposed on a thin metal film to couple light from broadside to the metal film as surface plasmon-polariton waves; below the metal film is located a thin insulating layer and a doped semiconductor region forming a metal-insulator-semiconductor structure. The device can be configured to operate as a reflection or transmission modulator, or as a photodetector, for example. Modulating the voltage applied to the metal-insulator-semiconductor structure modulates the carrier concentration in the semiconductor near the insulating layer, which modulates the refractive index of the semiconductor in this region, thus modulating the coupling efficiency to the surface plasmon-polaritons, thus modulating the reflectance and transmittance of the device. Modulated incident light produces a modulated photocurrent under bias which may be detected using electronics.

Abstract translation: 提出了诸如可用于电光调制和检测或其它应用的装置和技术。 例如，在金属薄膜上设置光学金属光栅，将来自宽边的光作为表面等离子体 - 极化子波耦合到金属膜; 在金属膜下方设有形成金属 - 绝缘体 - 半导体结构的薄绝缘层和掺杂半导体区域。 该装置可以被配置为例如作为反射或传输调制器或者作为光电检测器来操作。 对施加到金属 - 绝缘体 - 半导体结构的电压的调制调制半导体附近的半导体附近的载流子浓度，其调节该区域中的半导体的折射率，从而调制与表面等离子体激元的耦合效率，从而调制 器件的反射率和透射率。 调制的入射光在偏置下产生调制光电流，其可以使用电子元件检测。