公开(公告)号：US20210109022A1

公开(公告)日：2021-04-15

申请号：US16598627

申请日：2019-10-10

Applicant: VisEra Technologies Company Limited

Inventor： Hsin-Yi HSIEH ,  Chin-Chuan HSIEH ,  Wei-Ko WANG ,  Yu-Jen CHEN ,  Yi-Hua CHIU ,  Chung-Jung HSU

IPC: G01N21/64 ,  H01L27/144

Abstract: A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

公开(公告)号：US20180245978A1

公开(公告)日：2018-08-30

申请号：US15443044

申请日：2017-02-27

Applicant: VisEra Technologies Company Limited

Inventor： Wei-Ko WANG ,  Yu-Jen CHEN

IPC: G01J3/12 ,  G01J3/28

CPC classification number: G01J3/12 ,  G01J3/2803 ,  G01J2003/1213 ,  G01J2003/1282 ,  G01J2003/2806

Abstract: A spectrum-inspection device includes: a sensor unit array including a first sensor unit and a second sensor unit; a dual-band pass filter disposed on the sensor unit array to cover the first sensor unit and the second sensor unit, wherein the dual-band pass filter allows a first waveband and a second waveband of a light beam to pass through; and a filter disposed on the dual-band pass filter to cover the second sensor unit, wherein the filter allows wavelengths of a light beam longer than a first wavelength to pass through, wherein the first wavelength is longer than a peak wavelength of the first waveband and shorter than a peak wavelength of the second waveband.

公开(公告)号：US20200343390A1

公开(公告)日：2020-10-29

申请号：US16396424

申请日：2019-04-26

Applicant: VisEra Technologies Company Limited

Inventor： Yu-Jen CHEN

IPC: H01L31/0216 ,  H01L27/144 ,  G02B5/20 ,  G01J3/02 ,  G01J3/28

Abstract: A light filter structure is provided. The light filter structure includes a substrate having a plurality of photoelectric conversion elements. The light filter structure also includes a first metal-stacking layer disposed on the substrate. The light filter structure further includes a graded layer disposed on the first metal-stacking layer. The graded layer has a continuously or non-continuously varied thickness. The light filter structure includes a flatting layer disposed on the graded layer. The light filter structure also includes a second metal-stacking layer disposed on the flatting layer.

公开(公告)号：US20200319386A1

公开(公告)日：2020-10-08

申请号：US16377691

申请日：2019-04-08

Applicant: VisEra Technologies Company Limited

Inventor： Yu-Jen CHEN ,  Chung-Hao LIN ,  Shih-Liang KU

IPC: G02B5/20 ,  H01J37/34 ,  H01J37/32 ,  C03C17/34

Abstract: An optical filter and a method for forming the same are provided. The optical filter includes a substrate and a plurality of filter stacks formed on the substrate. Each of the plurality of filter stacks includes a higher-refractive-index layer, a medium-refractive-index layer, and a lower-refractive-index layer. The higher-refractive-index layer has a first refractive index of higher than 3.5. The medium-refractive-index layer is disposed on the higher-refractive-index layer. The medium-refractive-index layer has a second refractive index higher than 2.9 and lower than the first refractive index. The lower-refractive-index layer is disposed on the medium-refractive-index layer. The lower-refractive-index layer has a third refractive index lower than the second refractive index.

公开(公告)号：US20190305019A1

公开(公告)日：2019-10-03

申请号：US15944102

申请日：2018-04-03

Applicant: VisEra Technologies Company Limited

Inventor： Yu-Jen CHEN ,  Chang-Wei CHEN

IPC: H01L27/146 ,  H01L23/532

Abstract: An image sensor is provided. The image sensor includes a substrate having a first pixel region and a second pixel region. The image sensor also includes a resonator structure disposed over the substrate. The resonator structure includes a first metal layer over the first pixel region and the second pixel region. The resonator structure also includes a first insulating layer over the first metal layer and the first pixel region. The first insulating layer has a first thickness. The resonator structure further includes a second insulating layer over the first metal layer and the second pixel region. The second insulating layer has a second thickness that is greater than the first thickness. In addition, the resonator structure includes a second metal layer over the first insulating layer and the second insulating layer.

公开(公告)号：US20190074314A1

公开(公告)日：2019-03-07

申请号：US15697825

申请日：2017-09-07

Applicant: VisEra Technologies Company Limited

Inventor： Wu-Cheng KUO ,  Kuo-Feng LIN ,  Tsung-Lin WU ,  Yu-Jen CHEN ,  Chin-Chuan HSIEH ,  Kuang-Peng LIN

IPC: H01L27/146 ,  H01L31/0232

Abstract: An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

公开(公告)号：US20180335555A1

公开(公告)日：2018-11-22

申请号：US15597979

申请日：2017-05-17

Applicant: VisEra Technologies Company Limited

Inventor： Wei-Ko WANG ,  Yu-Jen CHEN ,  Chia-Hui WU

IPC: G02B5/28 ,  G02B5/20 ,  G01S7/481 ,  G01S17/89

Abstract: A light filter structure is provided. The light filter structure includes a first filter layer disposed over the substrate. The first filter layer has a transmittance greater than 50% in a first waveband, wherein the first filter layer is an interference-type filter. The light filter structure further includes a second filter layer disposed over the substrate. The second filter layer has a transmittance greater than 50% in a second waveband, wherein the second filter layer is an absorption-type filter. The first waveband partially overlaps the second waveband at the wavelength in a third waveband, and the third waveband is in an IR region. Furthermore, an image sensor used as a time-of-flight image sensor is also provided.