公开(公告)号：US20250142915A1

公开(公告)日：2025-05-01

申请号：US18383733

申请日：2023-10-25

Applicant: WOLFSPEED, INC.

Inventor： Matthew KING ,  James TWEEDIE ,  Kyle BOTHE ,  Scott SHEPPARD

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A transistor includes a group III-Nitride channel layer; a group III-Nitride barrier layer on the group III-Nitride channel layer, the group III-Nitride barrier layer having a higher bandgap than a bandgap of the group III-Nitride channel layer; a low resistance contact layer on the group III-Nitride barrier layer and/or on the group III-Nitride channel layer; a source electrically coupled to the group III-Nitride barrier layer. A drain electrically coupled to the group III-Nitride barrier layer; and a gate on the group III-Nitride barrier layer. Additionally, at least one of the drain and the source are arranged on the low resistance contact layer.