公开(公告)号：US20250142915A1

公开(公告)日：2025-05-01

申请号：US18383733

申请日：2023-10-25

Applicant: WOLFSPEED, INC.

Inventor： Matthew KING ,  James TWEEDIE ,  Kyle BOTHE ,  Scott SHEPPARD

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A transistor includes a group III-Nitride channel layer; a group III-Nitride barrier layer on the group III-Nitride channel layer, the group III-Nitride barrier layer having a higher bandgap than a bandgap of the group III-Nitride channel layer; a low resistance contact layer on the group III-Nitride barrier layer and/or on the group III-Nitride channel layer; a source electrically coupled to the group III-Nitride barrier layer. A drain electrically coupled to the group III-Nitride barrier layer; and a gate on the group III-Nitride barrier layer. Additionally, at least one of the drain and the source are arranged on the low resistance contact layer.

公开(公告)号：US20240429122A1

公开(公告)日：2024-12-26

申请号：US18340607

申请日：2023-06-23

Applicant: WOLFSPEED, INC.

Inventor： Kyle BOTHE ,  James TWEEDIE ,  Fabian RADULESCU ,  Michael SCHUETTE ,  Jeremy FISHER ,  Basim NOORI ,  Scott SHEPPARD

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: A thermally conductive interposer includes an interposer substrate having a first substrate surface and a second substrate surface. The first substrate surface being configured to be attached to a first device component. The second substrate surface being configured to be attached to a second device component. The interposer substrate being configured to support the second device component on the first device component and integrate the first device component and the second device component within a microelectronic device. Further, the interposer substrate is configured to transfer heat between the first device component and the second device component; and the interposer substrate is configured to be electrically nonconductive.

公开(公告)号：US20230197587A1

公开(公告)日：2023-06-22

申请号：US17555106

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Donald FARRELL ,  Marvin MARBELL ,  Jeremy FISHER ,  Dan NAMISHIA ,  Scott SHEPPARD ,  Dan ETTER

IPC: H01L23/495 ,  H01L23/64 ,  H01L23/00

CPC classification number: H01L23/49589 ,  H01L23/645 ,  H01L23/647 ,  H01L23/49575 ,  H01L24/85 ,  H01L29/778

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; at least one integrated passive device (IPD) component that includes a substrate arranged on said metal submount; and one or more interconnects extending between the transistor die and the at least one integrated passive device (IPD) component. The substrate includes a silicon carbide (SiC) substrate.