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1.发明授权公开(公告)号：US10734537B2
公开(公告)日：2020-08-04
申请号：US15806724
申请日：2017-11-08
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Tzu-Hsuan Chang
IPC: H01L31/0352 , H01L31/0304 , H01L31/11 , G01J1/42 , H01L31/0224 , H01L31/108 , G01J1/44
Abstract: Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).
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公开(公告)号：US09927706B2
公开(公告)日：2018-03-27
申请号：US15215016
申请日：2016-07-20
Inventor： Paul Franklin Nealey , Tzu-Hsuan Chang , Shisheng Xiong , Zhenqiang Ma , Michael Scott Arnold , Robert Jacobberger
IPC: G03F7/004 , G03F7/16 , H01L21/308 , H01J37/32 , C09D153/00 , H01L21/02 , C08L53/00 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/26 , G03F7/00
CPC classification number: G03F7/165 , B82Y30/00 , B82Y40/00 , C08K3/04 , C08L53/00 , C09D153/00 , C23C16/0227 , C23C16/26 , G03F7/0002 , G03F7/002 , G03F7/168 , H01J37/32009 , H01J2237/334 , H01L21/02527 , H01L21/02568 , H01L21/0271 , H01L21/3081 , H01L21/3086
Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
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3.发明申请公开(公告)号：US20170077339A1
公开(公告)日：2017-03-16
申请号：US14853184
申请日：2015-09-14
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Kanglin Xiong , Hongyi Mi , Tzu-Hsuan Chang , Shaoqin Gong , Jung-Hun Seo
IPC: H01L31/0687 , H01L31/18 , H01L31/0443 , H01L31/0304 , H01L31/028
CPC classification number: H01L31/0693 , Y02E10/544
Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.
Abstract translation: 提供了包括通过pn二极管隧道结连接在太阳能电池堆中的两个或更多个太阳能电池的串联太阳能电池，以及使用外延剥离和转印印刷制造串联太阳能电池的方法。 串联太阳能电池具有改进的隧道结结构，其包括集成在连接太阳能电池的pn二极管隧道结的p层和n层之间的电流隧道层。
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4.发明申请公开(公告)号：US20190140120A1
公开(公告)日：2019-05-09
申请号：US15806724
申请日：2017-11-08
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Tzu-Hsuan Chang
IPC: H01L31/0352 , H01L31/0304 , H01L31/11 , G01J1/42
Abstract: Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).
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公开(公告)号：US20170062229A1
公开(公告)日：2017-03-02
申请号：US15215016
申请日：2016-07-20
Inventor： Paul Franklin Nealey , Tzu-Hsuan Chang , Shisheng Xiong , Zhenqiang Ma , Michael Scott Arnold , Robert Jacobberger
IPC: H01L21/308 , H01J37/32 , C09D153/00 , C23C16/455
CPC classification number: G03F7/165 , B82Y30/00 , B82Y40/00 , C08K3/04 , C08L53/00 , C09D153/00 , C23C16/0227 , C23C16/26 , G03F7/0002 , G03F7/002 , G03F7/168 , H01J37/32009 , H01J2237/334 , H01L21/02527 , H01L21/02568 , H01L21/0271 , H01L21/3081 , H01L21/3086
Abstract: Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
Abstract translation: 本文提供了关于原子层化学图案和相关组合物的定向自组装（DSA）的方法。 原子层化学图案可以由诸如石墨烯的二维材料形成。 原子层化学图案提供高分辨率，低缺陷指向的自组装。 例如，可以使用石墨烯图案上的DSA实现在三维图案（例如聚合物刷）上可实现的DSA的分辨率的十倍。 原子层化学图案上的嵌段共聚物的组装也可以促进随后的蚀刻，因为原子层化学图案比常规图案材料更容易蚀刻。
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Patent Agency Ranking
公开(公告)号：US20230036175A1
公开(公告)日：2023-02-02
申请号：US17757887
申请日：2020-12-22
Inventor： Michael Arnold , Robert Jacobberger , Paul F. Nealey , Shisheng Xiong , Tzu-Hsuan Chang , Zhenqiang Ma
IPC: C09D153/00 , G03F7/11 , C08L53/00
Abstract: Methods of spatially directing the orientation and placement of multiple block copolymer (BCP) domains on isolated regions of a substrate are described. The methods involve epitaxially directing the assembly of BCP domains using spatial boundaries between regions with different surface composition, formed at the edges of isolated chemical regions on a background chemistry. Multiple vertical domains of BCP order on the isolated region, self-aligned in a direction parallel to edges of the isolated region. In some embodiments, vertical domains order on multiple isolated regions of a first chemistry of a chemical contrast pattern with horizontal domains on the regions of a second (background) chemistry of the chemical contrast pattern. Also provided herein are compositions resulting from the methods.
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公开(公告)号：US10749062B2
公开(公告)日：2020-08-18
申请号：US15865662
申请日：2018-01-09
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Kanglin Xiong , Hongyi Mi , Tzu-Hsuan Chang , Shaoqin Gong , Jung-Hun Seo
IPC: H01L31/18 , H01L31/0693
Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.
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公开(公告)号：US09899556B2
公开(公告)日：2018-02-20
申请号：US14853184
申请日：2015-09-14
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Kanglin Xiong , Hongyi Mi , Tzu-Hsuan Chang , Shaoqin Gong , Jung-Hun Seo
IPC: H01L31/0693
CPC classification number: H01L31/0693 , Y02E10/544
Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.
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公开(公告)号：US20180182911A1
公开(公告)日：2018-06-28
申请号：US15865662
申请日：2018-01-09
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Kanglin Xiong , Hongyi Mi , Tzu-Hsuan Chang , Shaoqin Gong , Jung-Hun Seo
IPC: H01L31/0693
CPC classification number: H01L31/0693 , Y02E10/544 , Y02P70/521
Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.
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公开(公告)号：US09437628B1
公开(公告)日：2016-09-06
申请号：US14709850
申请日：2015-05-12
Applicant: Wisconsin Alumni Research Foundation
Inventor： Zhenqiang Ma , Yei Hwan Jung , Shaoqin Gong , Tzu-Hsuan Chang
IPC: H01L29/00 , H01L21/8234 , H01L21/8244 , H01L27/13 , H01L21/84
CPC classification number: H01L27/13 , H01L21/84 , H01L51/0013 , H01L51/0097
Abstract: Substantially biodegradable microwave integrated circuits and method for making the microwave integrated circuits are provided. The integrated circuits, which have applications in high performance flexible microwave and digital electronics, utilize biobased, biodegradable cellulose nanofibril films as a substrate and comprise only very small amounts of potentially toxic inorganic materials.
Abstract translation: 提供了基本可生物降解的微波集成电路和制造微波集成电路的方法。 在高性能柔性微波和数字电子应用中的集成电路利用生物基的可生物降解的纤维素纳米纤维膜作为基底，并且仅包含非常少量的潜在有毒的无机材料。
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