公开(公告)号：US20080236493A1

公开(公告)日：2008-10-02

申请号：US12055945

申请日：2008-03-26

Applicant: Yosuke SAKAO

Inventor： Yosuke SAKAO

IPC: C23C16/505

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J2237/2001

Abstract: A plasma processing apparatus performs a plasma processing on a substrate to be processed by generating plasma between a first electrode and a second electrode disposed to face each other in a processing chamber by applying a radio frequency power to the first electrode from a radio frequency power supply connected to the first electrode. The plasma processing apparatus includes a dielectric body disposed near the first electrode and a conductor provided in the dielectric body. Further, a radio frequency leakage line is connected to the conductor, and the radio frequency power applied to the first electrode leaks through the radio frequency leakage line to an earth ground. In addition, an impedance adjusting circuit is provided on the radio frequency leakage line and controls an amount of the radio frequency power flowing through the radio frequency leakage line by adjusting an impedance.

Abstract translation: 等离子体处理装置通过在处理室内通过从射频电源向第一电极施加射频电力而在处理室中彼此面对的第一电极和第二电极之间产生等离子体来对待处理的基板进行等离子体处理 连接到第一电极。 等离子体处理装置包括设置在第一电极附近的电介质体和设置在电介质体中的导体。 此外，射频漏电线连接到导体，并且施加到第一电极的射频功率通过射频漏电线泄漏到地面。 另外，在射频漏电线路上设置阻抗调整电路，通过调整阻抗来控制流过射频漏电线路的射频功率量。