公开(公告)号：US20240230540A1

公开(公告)日：2024-07-11

申请号：US18560163

申请日：2022-05-04

Applicant: ams-OSRAM AG

Inventor： Deborah MORECROFT ,  Jochen KRAFT ,  Desiree RIST ,  Josef EHGARTNER

IPC: G01N21/77 ,  G02B6/136 ,  G02B6/12

CPC classification number: G01N21/7703 ,  G02B6/136 ,  G01N2021/7779 ,  G01N2201/0221 ,  G02B2006/12138

Abstract: A method for manufacturing a sensor includes providing a lower cladding layer, depositing a waveguide layer on the lower cladding layer, forming a sensing waveguide and a reference waveguide by photolithography and etching the waveguide layer in places, and forming a photoresist structure-on a part of the sensing waveguide by photolithography. The method also includes depositing an upper cladding layer on the photoresist structure, the sensing waveguide, the reference waveguide, and the lower cladding layer. The method further includes removing the photoresist structure with the part of the upper cladding layer deposited on the photoresist structure so that an opening within the upper cladding layer is formed above the sensing waveguide. The method additionally includes depositing a functionalization material within the opening. From the waveguide layer an auxiliary structure is formed by photolithography and etching the waveguide layer, and the opening is above the auxiliary structure.