Abstract:
A photo sensing chip and a manufacturing method thereof are disclosed. The photo sensing chip includes a silicon substrate and a plurality of photo sensors formed on the silicon substrate. The photo sensors include a first photo sensor and a second photo sensor. The first photo sensor has a first P-N junction and a first depletion region is formed at first P-N junction for receiving a first light band of an incident light to generate a first photo current. The second photo sensor has a second P-N junction and a second depletion region is formed at second P-N junction for receiving a second light band of the incident light to generate a second photo current. A first process parameter corresponds to the first depletion region and a second process parameter corresponds to the second depletion region, wherein the first process parameter and the second process parameter are different.
Abstract:
A light sensor and a manufacturing method thereof are disclosed. The light sensor is capable of being coupled to a carry object and includes a sensing chip and a plurality of conductive connecting elements. The sensing chip includes a first surface and a second surface opposite to each other. The sensing chip also includes a sensing unit disposed between the first surface and the second surface and at least partially exposed by a window formed on the second surface. The first surface faces the carry object when the light sensor is coupled to a carry object. The conductive connecting elements are disposed on the first surface and coupled to the sensing unit in order to couple the light sensor to the carry object.
Abstract:
A light sensor and a manufacturing method thereof are disclosed. The light sensor is capable of being coupled to a carry object and includes a sensing chip and a plurality of conductive connecting elements. The sensing chip includes a first surface and a second surface opposite to each other. The sensing chip also includes a sensing unit disposed between the first surface and the second surface and at least partially exposed by a window formed on the second surface. The first surface faces the carry object when the light sensor is coupled to a carry object. The conductive connecting elements are disposed on the first surface and coupled to the sensing unit in order to couple the light sensor to the carry object.
Abstract:
A proximity sensor includes a proximity sensing unit and a signal processing unit. The proximity sensing unit detects whether an object to be detected is close by to obtain a measured value. The signal processing unit compares the measured value with an initial noise cross-talk value to determine whether the initial noise cross-talk value should be updated. If the determined result of the signal processing unit is no, the signal processing unit compares the measured value with a default value to determine whether the object to be detected is located in a detection range of the proximity sensing unit.
Abstract:
A proximity sensor package and a packaging method thereof are disclosed. The proximity sensor package includes a light emitting unit and a light sensor. The light sensor has a first surface having a light sensing area. The light emitting unit is disposed on the first surface of the light sensor outside the light sensing area.
Abstract:
A proximity sensor and a circuit layout method thereof are disclosed. The proximity sensor includes a light sensor and a light emitting unit. The light sensor includes a semiconductor substrate and a bonding pad. The semiconductor substrate has a first circuit region. At least one semiconductor device is disposed in the first circuit region. The bonding pad is disposed above the first circuit region and a gap is existed between the bonding pad and the at least one semiconductor device. The bonding pad is connected to the semiconductor substrate out of the first circuit region. The light emitting unit is disposed on the bonding pad of the light sensor.