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    BENT CARBON NANOTUBES AND METHODS OF PRODUCTION
    8.
    发明申请
    BENT CARBON NANOTUBES AND METHODS OF PRODUCTION 审中-公开
    硼碳纳米管及其生产方法

    公开(公告)号：US20150239739A1

    公开(公告)日：2015-08-27

    申请号：US14706793

    申请日：2015-05-07

    Applicant: Nina Markovic ,  Christopher A. Merchant ,  James R. Medford

    Inventor： Nina Markovic ,  Christopher A. Merchant ,  James R. Medford

    IPC: C01B31/00 ,  B01J19/08 ,  C01B31/02

    CPC classification number: B01J19/087 ,  B01J2219/0803 ,  B01J2219/0886 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/00 ,  C01B32/158 ,  C01B32/16 ,  C01B32/162 ,  C01B32/168 ,  C01B2202/22 ,  C01P2004/13

    Abstract: A method of producing carbon nanotubes includes directing a flow of a gas over a substrate to provide growth of at least one carbon nanotube in a carbon-nanotube-growth region of the substrate; applying an electric field to the carbon-nanotube-growth region of the substrate after the at least one carbon nanotube has begun to grow in the carbon-nanotube-growth region, the electric field being substantially in a first direction in the carbon-nanotube-growth region; and changing the electric field at a preselected time to be substantially in a second direction in the carbon-nanotube-growth region during growth of the at least one carbon nanotube. The second direction is different from the first direction resulting in a bend substantially at a selected position of the at least one carbon nanotube, the method of producing carbon nanotubes providing the production of the at least one carbon nanotube having at least one bend substantially at a selected position along the at least one carbon nanotube.

    Abstract translation: 制造碳纳米管的方法包括将气体流引导到衬底上以在衬底的碳纳米管生长区域中提供至少一个碳纳米管的生长; 在碳纳米管生长区域中开始生长至少一个碳纳米管之后，在基板的碳纳米管生长区域上施加电场，电场基本上在碳纳米管 - 生长区; 以及在所述至少一个碳纳米管生长期间，在所述碳纳米管生长区域中将预选时间的电场改变为基本上在所述碳纳米管生长区域中的第二方向。 第二方向与第一方向不同，导致基本上在至少一个碳纳米管的选定位置处的弯曲，制造碳纳米管的方法，其提供至少一个碳纳米管的制造，所述碳纳米管具有至少一个弯曲部， 沿着至少一个碳纳米管的选定位置。

    HIGH POWER NON-THERMAL PLASMA SYSTEM FOR INDUSTRIAL APPLICATIONS
    9.
    发明申请
    HIGH POWER NON-THERMAL PLASMA SYSTEM FOR INDUSTRIAL APPLICATIONS 有权
    用于工业应用的高功率非热等离子体系统

    公开(公告)号：US20140021035A1

    公开(公告)日：2014-01-23

    申请号：US13933460

    申请日：2013-07-02

    Applicant: DREXEL UNIVERSITY

    Inventor： ALEXANDER RABINOVICH ,  GARY NIRENBERG ,  IVAN CHERNETS ,  ALEXANDER FRIDMAN

    IPC: B01J19/08 ,  H05H1/48

    CPC classification number: B01J19/08 ,  B01J19/087 ,  B01J19/088 ,  B01J2219/0803 ,  B01J2219/0809 ,  B01J2219/0839 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0877 ,  B01J2219/0879 ,  B01J2219/0896 ,  C01B3/342 ,  C01B2203/02 ,  C01B2203/1235 ,  H05H1/44 ,  H05H1/48

    Abstract: Methods of increasing the total power of non-thermal plasma power systems are described. Various embodiments of the present invention provide non-thermal plasma reactor assemblies and methods of operating said assemblies, each assembly comprising: (a) at least two non-thermal plasma reactors, each reactor comprising at least one inlet circumferential gas flow inlet apparatus, an electrode, and a flow restricted exit portal, said reactor configured to eject a jet of non-thermal plasma external to said reactor; (b) said at least two non-thermal plasma reactors configured to work in tandem with one another such that a first reactor electrode can be maintained at a high voltage electric potential relative to a second reactor electrode, said first and second reactor electrodes forming an electrode pair able to maintain a non-thermal plasma discharge between the first and second reactor electrodes.

    Abstract translation: 描述了增加非热等离子体电力系统总功率的方法。 本发明的各种实施例提供非热等离子体反应器组件和操作所述组件的方法，每个组件包括：（a）至少两个非热等离子体反应器，每个反应器包括至少一个入口周向气流入口装置， 电极和限流出口，所述反应器被配置为在所述反应器外喷射非热等离子体射流; （b）所述至少两个非热等离子体反应器被配置为彼此串联工作，使得第一反应器电极可以相对于第二反应器电极保持在高电压电位，所述第一和第二反应器电极形成 电极对能够在第一和第二反应器电极之间保持非热等离子体放电。

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