公开(公告)号：US12119205B2

公开(公告)日：2024-10-15

申请号：US18435576

申请日：2024-02-07

Applicant: VELVETCH LLC

Inventor： Samir John Anz ,  David Irwin Margolese ,  William Andrew Goddard ,  Stewart Francis Sando

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32045 ,  H01J37/32027 ,  H01L21/3065 ,  H01J2237/3341

Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption. The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

公开(公告)号：US11869747B1

公开(公告)日：2024-01-09

申请号：US18149893

申请日：2023-01-04

Applicant: VELVETCH LLC

Inventor： Samir John Anz ,  David Irwin Margolese ,  William Andrew Goddard ,  Stewart Francis Sando

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32045 ,  H01J37/32027 ,  H01L21/3065 ,  H01J2237/3341

Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

公开(公告)号：US11842885B2

公开(公告)日：2023-12-12

申请号：US17021149

申请日：2020-09-15

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32183 ,  H01J37/32045 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

公开(公告)号：US20170241021A1

公开(公告)日：2017-08-24

申请号：US15521645

申请日：2014-10-29

Applicant: Toshiba Mitsubishi-Electric Industrial Systems Corporation

Inventor： Yoichiro TABATA ,  Kensuke WATANABE ,  Shinichi NISHIMURA

IPC: C23C16/503 ,  C23C16/52 ,  H01J37/32 ,  C23C16/458 ,  C23C16/34

CPC classification number: C23C16/503 ,  C23C16/34 ,  C23C16/4588 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32348 ,  H01J37/32357 ,  H01J2237/3321 ,  H01L21/31 ,  H05H1/46

Abstract: An electric discharge generator and power supply device of electric discharge generator includes a radical gas generation apparatus, a process chamber apparatus, and an n-phase inverter power supply device. The radical gas generation apparatus is located adjacent to the process chamber apparatus. The radical gas generation apparatus includes a plurality of (n) discharge cells. The n-phase inverter power supply device includes a power supply circuit configuration offering a means to control output of n-phase alternating current voltages and variably controls, according to positions of the plurality of discharge cells, the alternating current voltages of different phases.

公开(公告)号：US20160064923A1

公开(公告)日：2016-03-03

申请号：US14935910

申请日：2015-11-09

Applicant: Albert BULLIARD ,  Benoit FRAGNIÈRE ,  JoëL OEHEN

Inventor： Albert BULLIARD ,  Benoit FRAGNIÈRE ,  JoëL OEHEN

IPC: H02H3/38

CPC classification number: H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

公开(公告)号：US20130271885A1

公开(公告)日：2013-10-17

申请号：US13846430

申请日：2013-03-18

Applicant: Albert BULLIARD ,  Benoit FRAGNIERE ,  Joel OEHEN

Inventor： Albert BULLIARD ,  Benoit FRAGNIERE ,  Joel OEHEN

IPC: H02H3/38

CPC classification number: H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

公开(公告)号：US08542471B2

公开(公告)日：2013-09-24

申请号：US12701813

申请日：2010-02-08

Applicant: Albert Bulliard ,  Benoit Fragnière ,  Joël Oehen ,  Olivier Cardou

Inventor： Albert Bulliard ,  Benoit Fragnière ,  Joël Oehen ,  Olivier Cardou

IPC: H02H3/00

CPC classification number: H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

公开(公告)号：US20130221850A1

公开(公告)日：2013-08-29

申请号：US13846505

申请日：2013-03-18

Applicant: Albert BULLIARD ,  Benoit FRAGNIERE ,  Joel OEHEN ,  Olivier CARDOU

Inventor： Albert BULLIARD ,  Benoit FRAGNIERE ,  Joel OEHEN ,  Olivier CARDOU

IPC: H02H1/06

CPC classification number: H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

Abstract translation: 一种用于等离子体处理的电源装置，其中可能发生电弧，包括用于在输出端子之间产生电压的电源电路和连接在电源电路和其中一个输出端子之间的第一开关。 根据第一方面，电源装置包括连接到输出端子和电源电路的恢复能量电路。 根据第二方面，电源装置包括电感电路，其包括电感器和与电感器并联连接的第二开关。 根据第三方面，电源装置包括用于使电源电路和第一开关被接通和断开的控制器。 控制器被配置为通过自适应过程来确定淬灭时间间隔。 淬火时间间隔定义了在电弧的情况下在输出端子之间不产生电压的时间间隔。

公开(公告)号：US20130180964A1

公开(公告)日：2013-07-18

申请号：US13785888

申请日：2013-03-05

Applicant: Advanced Energy Industries, Inc.

Inventor： Milan Ilic

IPC: B23K10/00

CPC classification number: B23K10/006 ,  H01J37/32045 ,  H05H1/46

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract translation: 描述了用于管理传送到处理室的功率的系统和方法。 在一个实施例中，电流从等离子体处理室被拉出，同时在初始时间段期间开始向等离子体处理室施加电力，在初始时间段内电流的量被减少，从而增加量 在初始时间期间施加到等离子体处理室的功率。

公开(公告)号：US08482205B2

公开(公告)日：2013-07-09

申请号：US12687483

申请日：2010-01-14

Applicant: Thomas Kirchmeier ,  Michael Glueck ,  Hans-Juergen Windisch ,  Hanns-Joachim Knaus

Inventor： Thomas Kirchmeier ,  Michael Glueck ,  Hans-Juergen Windisch ,  Hanns-Joachim Knaus

IPC: H01J7/24

CPC classification number: G01R21/06 ,  G01R23/02 ,  H01J37/32045 ,  H02M7/003 ,  H02M7/5383 ,  H03H7/40 ,  H05B41/2806 ,  H05H1/46 ,  Y02B20/22

Abstract: Operation of a plasma supply device having at least one switching bridge with at least two switching elements, and configured to deliver a high frequency output signal having a power of >500 W and a substantially constant fundamental frequency >3 MHz to a plasma load is accomplished by determining at least one operating parameter, at least one environmental parameter of at least one switching element and/or a switching bridge parameter, determining individual drive signals for the switching elements taking into account the at least one operating parameter, the at least one environmental parameter and/or the switching bridge parameter, and individually driving the switching elements with a respective drive signal.

Abstract translation: 具有至少一个具有至少两个开关元件的开关桥的等离子体供给装置的操作被实现为等离子体负载，将具有> 500W的功率和基本上恒定的基频> 3MHz的高频输出信号传送到等离子体负载 通过确定至少一个操作参数，至少一个开关元件和/或开关桥接参数的至少一个环境参数，确定考虑到所述至少一个操作参数的开关元件的各个驱动信号，所述至少一个环境 参数和/或开关桥接参数，并用相应的驱动信号分别驱动开关元件。