Abstract:
A connection arrangement for forming a component carrier structure is disclosed. The connection arrangement includes a first electrically conductive connection element and a second electrically conductive connection element. The first connection element and the second connection element are configured such that, upon connecting the first connection element with the second connection element along a connection direction, a form fit is established between the first connection element and the second connection element that limits a relative motion between the first connection element and the second connection element in a plane perpendicular to the connection direction. A component carrier and a method of forming a component carrier structure are also disclosed.
Abstract:
Computer modules with small thicknesses and associated methods of manufacturing are disclosed. In one embodiment, the computer modules can include a module substrate having a module material and an aperture extending at least partially into the module material. The computer modules can also include a microelectronic package carried by the module substrate. The microelectronic package includes a semiconductor die carried by a package substrate. At least a portion of the semiconductor die extends into the substrate material via the aperture.
Abstract:
Method and apparatus for bonding an electrical circuit component onto a substrate. A first electrically conductive bonding pad is formed on the component, and a second electrically conductive bonding pad is formed on the substrate. One of said first and second bonding pads is physically split into at least two parts, with electrical discontinuity between the two parts. An electrically conductive bond is formed between the first and second bonding pads such that electrical continuity is established from one part of the one bonding pad, through the other of the bonding pads, and through the second part of the one bonding pad. The integrity of the electrically conductive bond is evaluated by testing electrical continuity between the at least two parts.
Abstract:
A printed circuit board (PCB) structure with a heat dissipation function is provided, including: a package substrate; a landing pad formed over a portion of the package substrate from a first surface thereof, wherein the landing pad has a rectangular configuration and has a plurality of corners; a plurality of ground traces formed over various portions of the package substrate, physically connecting to the bond pad from at least two of the corners thereof, respectively; a first through hole formed through the landing pad and the package substrate from substantially a center portion of the bonding pad; and a plurality of second through holes formed through the landing pad and the package substrate from substantially one of the corners of the bonding pad, wherein the second through holes are adjacent to the ground traces, respectively.
Abstract:
The circuit board assembly includes a first circuit board having a first plurality of electronic components attached to a major surface of the first circuit board. The first plurality of electronic components is electrically interconnected to a first plurality of conductive pads defined on the major surface of the first circuit board. A second circuit board has a second plurality of electronic components attached to a first major surface of the second circuit board. The second plurality of electronic components is electrically interconnected to a second plurality of conductive pads defined on a second major surface of the second circuit board. The first and second circuit board are attached by coupling the first and second plurality of conductive pads. A portion of the first plurality of electronic components on the first circuit board are disposed within a cavity defined by the second major surface of the second circuit board.
Abstract:
An apparatus includes a printed circuit board. The printed circuit board includes at least one conductive layer on top a first dielectric layer, wherein the at least one conductive layer comprises at least one of a ground plane and a power plane. The printed circuit board includes a second dielectric layer on top of the at least one conductive layer. The printed circuit board includes a thermal pad on top of the second dielectric layer. The printed circuit board is fabricated by forming at least one plated through hole for electrically coupling the thermal pad to the at least one conductive layer. The printed circuit board is fabricated by backdrilling the at least one plated through hole to remove a portion of the conductive material, wherein subsequent to the backdrilling the conductive material remaining in the at least one plated through hole electrically couples one or more of the at least one conductive layer to the thermal pad.
Abstract:
A semiconductor package module may include a first substrate, and a second substrate disposed to face the first substrate. The semiconductor package module may include an interconnection member electrically connecting the first substrate to the second substrate and including a plurality of wires. Portions of the plurality of wires may be twisted and wound together and may be bent to extend in a predetermined direction.
Abstract:
Embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies and methods of making them are provided. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.
Abstract:
Methods are provided for making embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.
Abstract:
A mounting member includes a plurality of internal connecting portions, each of which is electrically connected to an electronic device, and a plurality of external connecting portions, each of which is soldered, wherein the plurality of external connecting portions include a first connecting portion in communication with at least any of the plurality of internal connecting portions, and a second connecting portion different from the first connecting portion, and surfaces of the first connecting portion and the second connecting portion include gold layers, and a thickness of the gold layer of the second connecting portion is smaller than a thickness of the gold layer of the first connecting portion.