公开(公告)号：US20010000702A1

公开(公告)日：2001-05-03

申请号：US09735192

申请日：2000-12-11

Applicant: United Technologies Corporation

Inventor： Brian E. Mensinger

IPC: H01J037/305 ,  H01J009/18

CPC classification number: H01J9/04 ,  H01J37/067

Abstract: A method includes providing an electron gun having a first head with a thermionic electron source and an accelerating electrode, and further includes replacing the first head with a second head having a power rating substantially different than that of the first head, and subsequently operating the electron gun without replacing the accelerating electrode. The electron gun may further include a platform spaced apart from the accelerating electrode and having an adjustably located locating member that engages a reference member on the head to position the head in three dimensions relative to the accelerating electrode. The platform may be adjustably spaced from the accelerating electrode in order vary the distance between the electron source and the accelerating electrode.

Abstract translation: 一种方法包括提供一种电子枪，其具有带有热离子电子源和加速电极的第一头，还包括用具有基本上不同于第一头的功率额定值的第二头替换第一头，随后操作电子 而不需要更换加速电极。 电子枪还可以包括与加速电极间隔开的平台，并且具有可调节定位的定位构件，该定位构件与头部上的参考构件接合，以相对于加速电极在三维位置定位头部。 平台可以与加速电极可调节地间隔开，以便改变电子源和加速电极之间的距离。

公开(公告)号：US20040113097A1

公开(公告)日：2004-06-17

申请号：US10321942

申请日：2002-12-17

Applicant: International Business Machines Corporation

Inventor： Herschel M. Marchman ,  Aaron D. Shore

IPC: H01J037/305

CPC classification number: H01J37/3056 ,  H01J2237/31744

Abstract: A method and apparatus for editing an integrated circuit by bombarding a feature in need of editing with either a low-energy or high-energy electron beam in the presence of a gas whereby low energy electrons activate reactants adsorbed on the surface of the feature in need of editing to form active species on the feature surface. The reaction products from the process can be easily removed whereby IC damage, leakage between metal features, wafer contamination and physical sputtering of undesired material can be significantly minimized while still possessing nanometer-scale spatial resolution. The low energy electrons for activating the reactants adsorbed on the surface of the feature to be edited may be emitted from the electron beam itself or they may be secondary low energy electrons emitted from the surface of the feature being edited.

Abstract translation: 一种用于通过在气体存在下用低能量或高能量电子束轰击需要编辑的特征来编辑集成电路的方法和装置，由此低能量电子激活吸附在需要的特征表面上的反应物 的编辑，以在特征表面上形成活跃物种。 来自该方法的反应产物可以容易地除去，由此IC损坏，金属特征之间的泄漏，晶片污染和不想要的材料的物理溅射可以显着地最小化，同时仍然具有纳米级的空间分辨率。 用于激活吸附在要编辑的特征表面上的反应物的低能电子可以从电子束本身发射，或者它们可以是从被编辑的特征的表面发射的二次低能电子。

公开(公告)号：US20030047691A1

公开(公告)日：2003-03-13

申请号：US10206843

申请日：2002-07-27

Inventor： Christian R. Musil ,  J. David Casey JR. ,  Thomas J. Gannon ,  Clive Chandler ,  Xiadong Da

IPC: H01J037/305

CPC classification number: G03F1/74 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/31744

Abstract: A method and apparatus for electron beam processing using an electron beam activated gas to etch or deposit material. The invention is particularly suitable for repairing defects in lithography masks. By using an electron beam in place of an ion beam, the many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch the substrate. In one embodiment, xenon difluoride gas is activated by the electron beam to etch a tungsten, tantalum nitride, or molybdenum silicide film on a transmission or reflection mask. To prevent spontaneous etching by the etchant gas in processed sites at which the passivation layer was removed, processed sites can be re-passivated before processing additional sites.

Abstract translation: 一种使用电子束活化气体蚀刻或沉积材料的电子束处理方法和装置。 本发明特别适用于修补光刻掩模中的缺陷。 通过使用电子束代替离子束，消除了与离子束掩模修复相关的许多问题，例如染色和河床。 端点检测并不重要，因为电子束和气体不会蚀刻衬底。 在一个实施方案中，氙二氟化物气体被电子束激活以蚀刻透射或反射掩模上的钨，氮化钽或硅化钼膜。 为了防止蚀刻剂气体在去除钝化层的处理部位进行自发蚀刻，可以在处理其它部位之前重新钝化加工部位。