公开(公告)号：US06548947B2

公开(公告)日：2003-04-15

申请号：US09879785

申请日：2001-06-12

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J702

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2329/00

Abstract: A method for fabricating row lines over a field emission array in which two mask steps are used to define row lines and pixel openings through selected regions of each row line. A first mask may be employed in the removal of dielectric material and conductive material from between pixel rows and from substantially above each pixel of the field emission array. A second mask may be used in the removal of semiconductor material from between the adjacent rows of pixels. Alternatively, a first mask may be employed in the definition of row lines, while a second mask may be used in the formation of pixel openings. Field emission arrays having a semiconductive grid and a relatively thin passivation layer exposed between adjacent row lines are also disclosed.

Abstract translation: 一种用于在场发射阵列上制造行线的方法，其中使用两个掩模步骤来定义穿过每条行线的选定区域的行线和像素开口。 第一掩模可以用于从像素行之间以及从场发射阵列的每个像素的大致上方去除电介质材料和导电材料。 第二掩模可以用于从相邻行像素之间移除半导体材料。 或者，可以在行线的定义中采用第一掩模，而可以在形成像素开口中使用第二掩模。 还公开了具有在相邻行线之间暴露的半导电栅格和相对薄的钝化层的场致发射阵列。