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    Glass passivated double beveled semiconductor device with partially spaced preform
    1.
    发明授权
    Glass passivated double beveled semiconductor device with partially spaced preform 失效
    具有部分间距预制的玻璃钝化双电极半导体器件

    公开(公告)号：US3643136A

    公开(公告)日：1972-02-15

    申请号：US3643136D

    申请日：1970-05-22

    Applicant: GEN ELECTRIC

    Inventor： TUFT BERNARD R

    IPC: H01L23/31 ,  H01L29/06 ,  H01L1/08

    CPC classification number: H01L29/0661 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

    Abstract: A silicon semiconductive element is provided with first and second spaced contact surfaces. A beveled peripheral edge extends from the first contact surface and intersects a first junction, and a second peripheral edge extends from the second contact surface to the beveled edge and intersects a second junction. A ceramic preform surrounds the semiconductive element with a surface conforming to one of the peripheral edges of the element. The preform has a thermal coefficient of expansion substantially matching that of the silicon thyristor element. A glass passivant bonds the one peripheral edge of the element to the conforming surface of the preform. The glass passivant also overlies a remaining of the peripheral edges and is spaced from the preform adjacent this edge. The glass passivant has a thermal coefficient of expansion in excess of that of silicon and below 45 X 10 7/*C., a firing temperature below that of the preform, and a maximum thickness less than 1 mil. Contacts are associated with the first and second contact surfaces and are sealingly associated with the preform.

    Abstract translation: 硅半导体元件设置有第一和第二间隔开的接触表面。 斜边周缘从第一接触表面延伸并且与第一接合部相交，第二周缘从第二接触表面延伸到斜面并且与第二接合部相交。 陶瓷预制件围绕半导体元件，其表面符合元件的外围边缘之一。 预成型件的热膨胀系数基本上与硅晶闸管元件的热膨胀系数一致。 玻璃钝化剂将元件的一个周边边缘结合到预制件的适形表面。 玻璃钝化剂还覆盖了周边边缘的剩余部分，并且与邻近该边缘的预成型件间隔开。 玻璃钝化剂具有超过硅的热膨胀系数，低于45×10 -7 /℃，烧制温度低于预制件的烧成温度，最大厚度小于1密耳。 触点与第一和第二接触表面相关联并且与预型件密封地相关联。

    High temperature semiconductor package
    6.
    发明授权
    High temperature semiconductor package 失效
    高温半导体封装

    公开(公告)号：US3566212A

    公开(公告)日：1971-02-23

    申请号：US3566212D

    申请日：1969-02-24

    Applicant: TRW SEMICONDUCTORS INC

    Inventor： MARX DAVID WAYNE

    IPC: H01L23/15 ,  H01L23/053 ,  H01L23/08 ,  H01L1/08

    CPC classification number: H01L23/053 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

    Abstract: A package for a transistor or other semiconductor device wherein a semiconductor crystal is connected to a first thermal conducting ceramic layer and enclosed within a cavity created by a second thermal conducting ceramic layer. Openings in at least one of the thermal conducting ceramic layers are filled with a conductive material, the material making electrical contact with the active regions of the semiconductor device. Metal contacts are connected to the thermal conducting ceramic layer making electrical contact with the conductive material in the openings, and therefore making electrical contact with the active regions of the semiconductor device.

    Microwave transistor package
    7.
    发明授权
    Microwave transistor package 失效
    微波晶体管封装

    公开(公告)号：US3590341A

    公开(公告)日：1971-06-29

    申请号：US3590341D

    申请日：1968-08-19

    Applicant: KMC SEMICONDUCTOR CORP

    Inventor： PRESTON WILLIAM H

    IPC: H01L23/495 ,  H01L23/66 ,  H01L1/08 ,  H01L1/14

    CPC classification number: H01L23/49562 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    Abstract: A microwave transistor package is disclosed which utilizes a disc of beryllium oxide. One surface of the disc is metallized to form a symmetrical pattern of four contacts. These include a collector contact and a base contact oppositely disposed along one diameter of the disc. The remaining two contacts are oppositely disposed along a second diameter perpendicular to the first. They are substantially wider than the collector and base contacts and comprise double emitter contacts. The transistor is mounted on the collector contact and a wire connects its base to the base contact. An emitter wire connects both of the metallized emitter contacts and its midpoint is connected to the emitter of the transistor. The package is hermetically sealed by means of a beryllium oxide cap enclosing the transistor and ''''glassed'''' to the disc.

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