Invention Patent
- Patent Title: ULTRA HIGH DENSITY THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES
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Application No.: CA2024639Application Date: 1990-09-05
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Publication No.: CA2024639CPublication Date: 1993-12-21
- Inventor: PRICER WILBUR D , FAURE THOMAS B , MEYERSON BERNARD S , NESTORK WILLIAM J , TURNBULL JOHN R JR
- Applicant: IBM
- Assignee: IBM
- Current Assignee: IBM
- Priority: US42767989 1989-10-26
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L21/3213 ; H01L21/334 ; H01L21/822 ; H01L21/8242 ; H01L27/00 ; H01L27/04 ; H01L27/06 ; H01L27/10 ; H01L27/108 ; H01L21/461 ; H01L29/06
Abstract:
ULTRA HIGH DENSITY THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES Three-dimensional semiconductor structures are taught in which various device types are formed from a plurality of planar layers on a substrate. The major process steps include the formation of a plurality of alternating layers of material, including semiconductor and dielectric materials, forming a vertical access hole in the layers, processing the layers selectively to form active or passive semiconductor devices, and filling the access hole with a conductor. The ultimate structure includes a three-dimensional memory array in which entire dynamic memory cells are fabricated in a stacked vertical orientation above support circuitry formed on a planar surface.
Public/Granted literature
- CA2024639A1 ULTRA HIGH DENSITY THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES Public/Granted day:1991-04-27
Information query
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