公开(公告)号：CA2024639C

公开(公告)日：1993-12-21

申请号：CA2024639

申请日：1990-09-05

Applicant: IBM

Inventor： PRICER WILBUR D ,  FAURE THOMAS B ,  MEYERSON BERNARD S ,  NESTORK WILLIAM J ,  TURNBULL JOHN R JR

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/00 ,  H01L27/04 ,  H01L27/06 ,  H01L27/10 ,  H01L27/108 ,  H01L21/461 ,  H01L29/06

Abstract: ULTRA HIGH DENSITY THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES Three-dimensional semiconductor structures are taught in which various device types are formed from a plurality of planar layers on a substrate. The major process steps include the formation of a plurality of alternating layers of material, including semiconductor and dielectric materials, forming a vertical access hole in the layers, processing the layers selectively to form active or passive semiconductor devices, and filling the access hole with a conductor. The ultimate structure includes a three-dimensional memory array in which entire dynamic memory cells are fabricated in a stacked vertical orientation above support circuitry formed on a planar surface.

公开(公告)号：DE69020852D1

公开(公告)日：1995-08-17

申请号：DE69020852

申请日：1990-08-17

Applicant: IBM

Inventor： PRICER WILBUR D ,  FAURE THOMAS B ,  MEYERSON BERNARD S ,  TURNBULL JOHN R ,  NESTORK WILLIAM

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/00 ,  H01L27/04 ,  H01L27/06 ,  H01L27/10 ,  H01L27/108 ,  G11C11/36 ,  H01L27/102

公开(公告)号：DE69020852T2

公开(公告)日：1996-03-14

申请号：DE69020852

申请日：1990-08-17

Applicant: IBM

Inventor： PRICER WILBUR D ,  FAURE THOMAS B ,  MEYERSON BERNARD S ,  TURNBULL JOHN R ,  NESTORK WILLIAM

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/00 ,  H01L27/04 ,  H01L27/06 ,  H01L27/10 ,  H01L27/108 ,  G11C11/36 ,  H01L27/102