金属烧结接合体和芯片接合方法

Invention Grant

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Patent Title: 金属烧结接合体和芯片接合方法
Application No.: CN201780051107.0

Application Date: 2017-08-17
Publication No.: CN109643663B

Publication Date: 2020-03-17
Inventor: 竹政哲 , 上岛稔
Applicant: 千住金属工业株式会社
Applicant Address: 日本东京都
Assignee: 千住金属工业株式会社
Current Assignee: 千住金属工业株式会社
Current Assignee Address: 日本东京都
Agency: 北京林达刘知识产权代理事务所
Agent 刘新宇; 李茂家
Priority: 2016-162247 2016.08.22 JP
International Application: PCT/JP2017/029532 2017.08.17
International Announcement: WO2018/037992 JA 2018.03.01
Date entered country: 2019-02-20
Main IPC: H01L21/52
IPC: H01L21/52 ; B22F7/06

Abstract:

提供热循环耐性和散热性优异的金属烧结接合体。对于本发明的金属烧结接合体，将基板与芯片接合，金属烧结接合体与芯片对置的矩形状区域的至少中央部和角部具有低于矩形状区域的平均孔隙率的低孔隙率区域，低孔隙率区域位于以矩形状区域的对角线为中心线的带状区域内。

Abstract(English):

Provided is a metal sintered bonding body having an excellent heat cycle resistance and heat dissipation performance. The metal sintered bonding body according to the present invention bonds a substrate and a die. At least the center part and a corner part of a rectangular region in which the metal sintered body faces the die has a low porosity region having a porosity lower than the average porosity of the rectangular region. The low porosity region is located in a strip-shaped region in which the center line is a diagonal of the rectangular region.

Public/Granted literature

CN109643663A 金属烧结接合体和芯片接合方法 Public/Granted day:2019-04-16

Information query

Chinese Patent Announcement Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/50	...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的
H01L21/52	....半导体在容器中的安装