A reading circuit for semiconductor non-volatile memories connected to at least one selected cell and at least one reference cell, the circuit including current/voltage conversion circuits receiving a first current flowing through the selected cell and a second current flowing through the reference cell and providing respectively on a first circuit node a first selected cell voltage and on a second node a second reference cell voltage, at least one differential amplifier connected at the input of the first and the second nodes and having an output terminal to provide a logic signal correlated to the selected cell information, a first voltage-controlled discharge switch circuit connected to the first node and to a voltage reference, a second switch circuit connected to the second node and the voltage reference, and first and second voltage comparator circuits receiving the first selected cell voltage and the second reference cell voltage.