本发明的厚度是形成在隧穿场效应栅极绝缘膜涉及一种晶体管，差异和/或形成在各个信道区中的耗尽层与所述源极侧沟道区的厚度大于漏侧沟道区薄的相应信道部分和 材料的差异，并且通过形成在沟道区比能带间隙的漏侧沟道区进一步源侧是不对称结构，其具有小的半导体材料，传统的双向电流特性和隧道电具有不对称通道和栅极通过提高低驱动电流的问题绝缘膜场 一种效应晶体管及其制造方法。

The thickness of the present invention is a gate insulating film formed on the tunneling field effect relates to a transistor, the difference and / or the respective channel section of the depletion layer formed in each channel region and the source side channel region with a thickness thinner than the drain-side channel regions and material differences, and further the source side by forming the channel region to the drain side channel region than the energy band gap is an asymmetric structure with a small semiconductor material, the conventional bi-directional current characteristic and the tunneling electric field having an asymmetric channel and a gate insulating film by improving the problem of the low drive current It provides an effect transistor and a method of manufacturing the same.