Invention Grant
- Patent Title: Electron microscope and method of aberration measurement
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Application No.: US15422936Application Date: 2017-02-02
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Publication No.: US10014153B2Publication Date: 2018-07-03
- Inventor: Yuji Kohno
- Applicant: JEOL Ltd.
- Applicant Address: JP
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JP
- Agency: The Webb Law Firm
- Priority: JP2016-18790 20160203
- Main IPC: H01J37/153
- IPC: H01J37/153 ; H01J37/22 ; H01J37/28 ; H01J37/244 ; H01J37/26

Abstract:
There is provided an electron microscope capable of measuring aberration with high accuracy. The electron microscope (100) comprises: an electron beam source (10) for producing an electron beam (EB); an illumination lens system (101) for focusing the electron beam (EB) onto a sample (S); a scanner (12) for scanning the focused electron beam (EB) over the sample (S); an aperture stop (30) having a plurality of detection angle-limiting holes (32) for extracting rays of the electron beam (EB) having mutually different detection angles from the electron beam (EB) transmitted through the sample (S); and a detector (20) for detecting the rays of the electron beam (EB) passed through the aperture stop (30).
Public/Granted literature
- US20170236684A1 Electron Microscope and Method of Aberration Measurement Public/Granted day:2017-08-17
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