Invention Grant
- Patent Title: Light-emitting diode and a method for manufacturing the same
-
Application No.: US15670050Application Date: 2017-08-07
-
Publication No.: US10177272B2Publication Date: 2019-01-08
- Inventor: Shao-Ying Ting , Jing-En Huang
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: GENESIS PHOTONICS INC.
- Current Assignee: GENESIS PHOTONICS INC.
- Current Assignee Address: TW Tainan
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW104123854A 20150723
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L23/00 ; H01L33/00 ; H01L33/06 ; H01L33/32

Abstract:
A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.
Public/Granted literature
- US20170338375A1 LIGHT-EMITTING DIODE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-11-23
Information query
IPC分类: