Invention Grant
- Patent Title: Crystalline multilayer oxide thin films structure in semiconductor device
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Application No.: US16014633Application Date: 2018-06-21
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Publication No.: US10204978B2Publication Date: 2019-02-12
- Inventor: Toshimi Hitora , Masaya Oda
- Applicant: FLOSFIA INC.
- Applicant Address: JP Kyoto-shi
- Assignee: FLOSFIA INC.
- Current Assignee: FLOSFIA INC.
- Current Assignee Address: JP Kyoto-shi
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Priority: JP2014-072779 20140331
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/24 ; H01L29/26 ; H01L29/66 ; H01L29/78 ; H01L29/86 ; H01L29/87 ; H01L21/02 ; H01L21/47 ; H01L21/477 ; H01L29/786 ; H01L29/872 ; H01L29/861
Abstract:
Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.
Public/Granted literature
- US20180308924A1 CRYSTALLINE MULTILAYER OXIDE THIN FILMS STRUCTURE IN SEMICONDUCTOR DEVICE Public/Granted day:2018-10-25
Information query
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