Liquid phase atomic layer deposition
Abstract:
A processing system and method for depositing a film on a substrate by liquid phase ALD is disclosed in various embodiments. The method includes providing the substrate in a process chamber, spinning on the substrate a first reactant in a first liquid to form a self-limiting layer of the first reactant on the substrate, spinning on the substrate a second reactant in a second liquid, where the second reactant reacts with the self-limiting layer of the first reactant on the substrate to form a film on the substrate, and repeating the spinning steps at least once until the film has a desired thickness. Other embodiments of the invention further include rinsing the substrate to remove excess first and second reactants from the substrate, and heat-treating the substrate during and/or following the film deposition.
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