Invention Grant
- Patent Title: Liquid phase atomic layer deposition
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Application No.: US14871619Application Date: 2015-09-30
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Publication No.: US10253414B2Publication Date: 2019-04-09
- Inventor: Robert D. Clark
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: B05D1/36
- IPC: B05D1/36 ; B05D3/12 ; C23C18/00 ; B05D1/00 ; B05D7/00 ; B05D1/38

Abstract:
A processing system and method for depositing a film on a substrate by liquid phase ALD is disclosed in various embodiments. The method includes providing the substrate in a process chamber, spinning on the substrate a first reactant in a first liquid to form a self-limiting layer of the first reactant on the substrate, spinning on the substrate a second reactant in a second liquid, where the second reactant reacts with the self-limiting layer of the first reactant on the substrate to form a film on the substrate, and repeating the spinning steps at least once until the film has a desired thickness. Other embodiments of the invention further include rinsing the substrate to remove excess first and second reactants from the substrate, and heat-treating the substrate during and/or following the film deposition.
Public/Granted literature
- US20160090652A1 LIQUID PHASE ATOMIC LAYER DEPOSITION Public/Granted day:2016-03-31
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