In one embodiment, a charged particle beam writing method includes writing a first pattern statically in central part of a first substrate having Charge Dissipation Layer (CDL), calculating, based on a position of the written first pattern, a first correction coefficient, writing a second pattern statically applying with the first correction coefficient in central part of a second substrate having no CDL, calculating, based on a position of the written second pattern, a second correction coefficient, writing a third pattern continuously applying with the first correction coefficient in central part of a third substrate having CDL, calculating, based on a position of the written third pattern, a third correction coefficient, writing a fourth pattern statically applying with the first correction coefficient in wide range of a fourth substrate having CDL, and calculating, based on a position of the written fourth pattern, a fourth correction coefficient.