Invention Grant
- Patent Title: Scanning methods for focus control for lithographic processing of reconstituted wafers
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Application No.: US15834614Application Date: 2017-12-07
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Publication No.: US10269662B2Publication Date: 2019-04-23
- Inventor: Paul M. Bischoff , Emily M. True , Raymond Ellis , A. J. Crespin
- Applicant: Ultratech, Inc.
- Applicant Address: US CA San Jose
- Assignee: Ultratech, Inc.
- Current Assignee: Ultratech, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Downs Rachlin Martin PLLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00 ; H01L21/67 ; H01L21/68 ; G03F7/20 ; G03F1/36 ; H01L21/027 ; G03F9/00

Abstract:
A method of processing a reconstituted wafer that supports IC chips includes operably disposing the reconstituted wafer in a lithography tool that has a depth of focus and a focus plane and that defines exposure fields on the reconstituted wafer, wherein each exposure field includes at least one of the IC chips. The method also includes scanning the reconstituted wafer with a line scanner to measure a surface topography of the reconstituted wafer as defined by the IC chips. The method also includes, for each exposure field: i) adjusting a position and/or an orientation of the reconstituted wafer so that a photoresist layers of the IC chips within the given exposure field fall within the depth of focus; and ii) performing an exposure with the lithography tool to pattern the photoresist layers of the IC chips in the given exposure field.
Public/Granted literature
- US20180166348A1 Scanning Methods For Focus Control For Lithographic Processing Of Reconstituted Wafers Public/Granted day:2018-06-14
Information query
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