Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US15453873Application Date: 2017-03-08
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Publication No.: US10319879B2Publication Date: 2019-06-11
- Inventor: Cheng-Hung Lin , Jeng-Jie Huang , Chi-Feng Huang
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: JCIPRNET
- Priority: TW105106975A 20160308
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/06 ; H01L33/32 ; H01L33/02

Abstract:
A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0≤x1 x2.
Public/Granted literature
- US20170263814A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2017-09-14
Information query
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