Invention Grant
- Patent Title: Memory management method, memory control circuit unit and memory storage device
-
Application No.: US14846830Application Date: 2015-09-07
-
Publication No.: US10338854B2Publication Date: 2019-07-02
- Inventor: Kok-Yong Tan , Horng-Sheng Yan
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW104123602A 20150721
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F3/06

Abstract:
A memory management method, a memory control circuit unit and a memory storage device are provided. In an exemplary embodiment, the memory management method includes: receiving a first write command and first write data and obtaining a first number; programming the first write data and moving first storage data stored in a plurality of first physical programming units, where a total number of the first physical programming units conforms to the first number; receiving a second write command and second write data and obtaining a second number; programming the second write data and moving second storage data stored in a plurality of second physical programming units, where a total number of the second physical programming units conforms to the second number; and erasing at least one physical erasing unit. Accordingly, waste of system resource in the data merging procedure may be reduced.
Public/Granted literature
- US20170024136A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2017-01-26
Information query