Invention Grant
- Patent Title: Light-emitting element with electrode structure
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Application No.: US15279149Application Date: 2016-09-28
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Publication No.: US10374130B2Publication Date: 2019-08-06
- Inventor: Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101146339A 20121207
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/24 ; H01L33/38 ; H01L33/44 ; H01L33/46 ; H01L33/54 ; H01L33/62

Abstract:
A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.
Public/Granted literature
- US20170018684A1 LIGHT-EMITTING ELEMENT Public/Granted day:2017-01-19
Information query
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