Invention Grant
- Patent Title: Semiconductor device and method for manufacturing such a semiconductor device
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Application No.: US15996589Application Date: 2018-06-04
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Publication No.: US10553437B2Publication Date: 2020-02-04
- Inventor: Holger Bartolf , Munaf Rahimo , Lars Knoll , Andrei Mihaila , Renato Minamisawa
- Applicant: ABB Schweiz AG
- Applicant Address: CH Baden
- Assignee: ABB Schweiz AG
- Current Assignee: ABB Schweiz AG
- Current Assignee Address: CH Baden
- Agency: Taft Stettinius & Hollister LLP
- Agent J. Bruce Schelkopf
- Priority: EP15197558 20151202
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/266 ; H01L29/739 ; H01L29/78 ; H01L29/10 ; H01L29/16 ; H01L29/66 ; H01L21/04 ; H01L29/06 ; H01L29/08 ; H01L29/36 ; H01L29/20

Abstract:
A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) forming source regions by applying a first mask with a first and second mask layer and applying an n dopant, forming a well layer by removing such part of the first mask, which is arranged between the two source regions, and applying a p dopant, forming two channel regions by forming a third mask by performing an etching step, by which the first mask layer is farther removed at the openings than the second mask layer, and then removing the second mask layer, wherein the remaining first mask layer forms a third mask and applying a p dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers.
Public/Granted literature
- US20180350602A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE Public/Granted day:2018-12-06
Information query
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