Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
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Application No.: US16189540Application Date: 2018-11-13
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Publication No.: US10559717B2Publication Date: 2020-02-11
- Inventor: Chun-Teng Ko , Chao-Hsing Chen , Jia-Kuen Wang , Yen-Liang Kuo , Chih-Hao Chen , Wei-Jung Chung , Chih-Ming Wang , Wei-Chih Peng , Schang-Jing Hon , Yu-Yao Lin
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW105136453A 20161109
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/38 ; H01L33/46 ; H01L33/00 ; H01L33/62 ; H01L33/06 ; H01L33/32 ; H01L33/30

Abstract:
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween, wherein the first semiconductor layer includes a surrounding exposed region not covered by the active layer, and the surrounding exposed region surrounds the active layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surrounding exposed region of the first semiconductor layer; an electrode layer formed on the first conductive region in the surrounding exposed region; an outside insulating layer covering a portion of the conductive layer and the electrode layer, and including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on the other side of the bonding layer.
Public/Granted literature
- US20190103515A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-04-04
Information query
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