Invention Grant
- Patent Title: Data writing method, memory control circuit unit and memory storage apparatus
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Application No.: US15412065Application Date: 2017-01-23
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Publication No.: US10586596B2Publication Date: 2020-03-10
- Inventor: Wei Lin , Yu-Cheng Hsu , Szu-Wei Chen
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW105137457A 20161116
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/10 ; G11C16/04 ; G11C29/00 ; G11C11/56 ; G11C16/08 ; G11C7/10 ; G06F3/06

Abstract:
A data writing method for a rewritable non-volatile memory module having a plurality of physical erasing units and a memory control circuit unit and a memory storage apparatus using the same are provided. Each of the physical erasing units has a plurality of physical programming unit sets, and each of the physical programming unit sets has a plurality of physical programming unit. The method includes receiving data and arranging the data to generate a first data stream and a second data stream. The method also includes encoding the first data stream and the second data stream to generate a third data stream, and issuing a programming command sequence to write the first data stream, the second data stream and the third data stream respectively into a first physical programming unit, a second physical programming unit and a third physical programming unit of a physical programming unit set.
Public/Granted literature
- US20180136841A1 DATA WRITING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS Public/Granted day:2018-05-17
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