A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.